EHD-jet patterned MoSon a high-dielectric for high mobility in thin film transistor applications.

Solution synthesis of MoSprecursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoSpattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoSafter a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoSwas transferred onto high-dielectric AlOand used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoSTFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 ± 2.99 cmVs, 7.39 ± 0.12 × 10, and 0.7 ± 0.05 V decade, respectively. This technique may have promise for future applications.