Can Thi Thu Thuy, Ko Hak-Lim, Choi Woon-Seop
Department of Display Engineering, Hoseo University, Asan 31499, Republic of Korea.
Department of Information and Communication Engineering, Hoseo University, Asan 31499, Republic of Korea.
Nanotechnology. 2021 Mar 25;32(24). doi: 10.1088/1361-6528/abed05.
Solution synthesis of MoSprecursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoSpattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoSafter a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoSwas transferred onto high-dielectric AlOand used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoSTFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 ± 2.99 cmVs, 7.39 ± 0.12 × 10, and 0.7 ± 0.05 V decade, respectively. This technique may have promise for future applications.
通过溶液合成二硫化钼前驱体并直接进行打印，可能是制造印刷电子器件的有效方法。利用电液动力学（EHD）喷射打印机和溶胶 - 凝胶体系，无需化学气相沉积即可获得线性二硫化钼图案。转移过程后二硫化钼的形态得以保持，没有皱纹或裂纹，与旋涂膜相比表面更加光滑。EHD喷射打印的二硫化钼被转移到高介电常数的氧化铝上，并用作薄膜晶体管（TFT）器件中的半导体层。印刷的二硫化钼薄膜晶体管具有相对良好的电学特性，例如线性场效应迁移率、电流比，以及分别为47.64±2.99 cm²V⁻¹s⁻¹、7.39±0.12×10³和0.7±0.05 V/十倍频程的低亚阈值摆幅。这项技术可能在未来应用中具有前景。
