Tiwari Preksha, Wen Pengyan, Caimi Daniele, Mauthe Svenja, Triviño Noelia Vico, Sousa Marilyne, Moselund Kirsten E
Opt Express. 2021 Feb 1;29(3):3915-3927. doi: 10.1364/OE.412449.
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate micro- and nanolasers of different shapes in InP by direct wafer bonding on Si. Metal-clad cavities have been proposed as means to scale dimensions beyond the diffraction limit of light by exploiting hybrid photonic-plasmonic modes. Here, we explore the size scalability of whispering-gallery mode light sources by cladding the sidewalls of the device with Au. We demonstrate room temperature lasing upon optical excitation for Au-clad devices with InP diameters down to 300 nm, while the purely photonic counterparts show lasing only down to 500 nm. Numerical thermal simulations support the experimental findings and confirm an improved heat-sinking capability of the Au-clad devices, suggesting a reduction in device temperature of 450 - 500 K for the metal-clad InP nanodisk laser, compared to the one without Au. This would provide substantial performance benefits even in the absence of a plasmonic mode. These results give an insight into the benefits of metal-clad designs to downscale integrated lasers on Si.
光学片上通信的一个关键组件是高效光源。然而,为了实现低每比特能量通信以及与硅互补金属氧化物半导体(Si CMOS)的局部集成,器件需要进一步缩小尺寸。在这项工作中,我们通过在硅上直接晶圆键合在磷化铟(InP)中制造不同形状的微纳激光器。金属包覆腔已被提出作为通过利用混合光子 - 等离子体模式来将尺寸缩小到光的衍射极限以下的手段。在这里,我们通过用金包覆器件的侧壁来探索回音壁模式光源的尺寸可扩展性。我们展示了对于直径低至300纳米的金包覆磷化铟器件,在光激发下的室温激光发射,而纯光子器件仅在直径低至500纳米时才显示激光发射。数值热模拟支持了实验结果,并证实了金包覆器件具有更好的散热能力,这表明与没有金包覆的情况相比,金包覆的磷化铟纳米盘激光器的器件温度降低了450 - 500开尔文。即使在没有等离子体模式的情况下,这也将带来显著的性能提升。这些结果深入了解了金属包覆设计对于缩小硅基集成激光器尺寸的益处。