Wen Pengyan, Tiwari Preksha, Mauthe Svenja, Schmid Heinz, Sousa Marilyne, Scherrer Markus, Baumann Michael, Bitachon Bertold Ian, Leuthold Juerg, Gotsmann Bernd, Moselund Kirsten E
IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland.
ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland.
Nat Commun. 2022 Feb 17;13(1):909. doi: 10.1038/s41467-022-28502-6.
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/InGaAs/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.
将III-V族纳米结构与硅进行无缝集成是一个长期目标，也是迈向集成光链路的重要一步。在本工作中，我们展示了单片集成在硅上的按比例缩小且与波导耦合的III-V族光电二极管，其采用InP/InGaAs/InP p-i-n异质结构实现。波导耦合器件在-1 V时暗电流低至0.048 A/cm²，在-2 V时响应度高达0.2 A/W。使用中心波长约为1320 nm的光栅耦合器，我们展示了截止频率f超过70 GHz的高速检测以及采用开关键控（OOK）和四电平幅度调制（4PAM）的50 GBd数据接收。当器件在正向偏置下作为发光二极管工作时，其发射中心波长为1550 nm的光。此外，我们还使用扫描热显微镜研究了器件的自热情况，并且发现器件作为发射器工作期间温度仅升高约15 K，这与热模拟结果一致。
