Shao Yu-Tsun, Yuan Renliang, Hsiao Haw-Wen, Yang Qun, Hu Yang, Zuo Jian-Min
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W Green St, Urbana, IL 61801, United States; Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave, Urbana, IL 61801, United States.
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W Green St, Urbana, IL 61801, United States; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
Ultramicroscopy. 2021 Dec;231:113252. doi: 10.1016/j.ultramic.2021.113252. Epub 2021 Mar 11.
The development of four-dimensional (4D) scanning transmission electron microscopy (STEM) using fast detectors has opened-up new avenues for addressing some of longstanding challenges in electron imaging. One of these challenges is how to image severely distorted crystal lattices, such as at a dislocation core. Here we develop a new 4D-STEM technique, called Cepstral STEM, for imaging disordered crystals using electron diffuse scattering. In contrast to analysis based on Bragg diffraction, which measures the average and periodic scattering potential, electron diffuse scattering can detect fluctuations caused by crystal disorder. Local fluctuations of diffuse scattering are captured by scanning electron nanodiffraction (SEND) using a coherent probe. The harmonic signals in electron diffuse scattering are detected through Cepstral analysis and used for imaging. By integrating Cepstral analysis with 4D-STEM, we demonstrate that information about the distortive part of electron scattering potential can be separated and imaged at nm spatial resolution. We apply the technique to the analysis of a dislocation core in SiGe and lattice distortions in a high entropy alloy.
利用快速探测器发展的四维(4D)扫描透射电子显微镜(STEM)为解决电子成像中一些长期存在的挑战开辟了新途径。其中一个挑战是如何对严重扭曲的晶格进行成像,比如位错核心处的晶格。在此,我们开发了一种新的4D-STEM技术,称为倒谱STEM,用于利用电子漫散射对无序晶体进行成像。与基于布拉格衍射的分析不同,布拉格衍射测量的是平均和周期性散射势,而电子漫散射可以检测由晶体无序引起的涨落。利用相干探针通过扫描电子纳米衍射(SEND)捕获漫散射的局部涨落。通过倒谱分析检测电子漫散射中的谐波信号并用于成像。通过将倒谱分析与4D-STEM相结合,我们证明了关于电子散射势畸变部分的信息可以在纳米空间分辨率下分离并成像。我们将该技术应用于SiGe中位错核心的分析以及高熵合金中的晶格畸变分析。