Department of Nanoscience, Joint School of Nanoscience and Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States.
J Phys Chem A. 2021 Apr 15;125(14):2944-2953. doi: 10.1021/acs.jpca.1c01412. Epub 2021 Apr 2.
Halogen bonding has received intensive attention recently for its applications in the construction of supramolecular assemblies and crystal engineering and its implications and potentials in chemical and biological processes and rational drug design. Peculiarly, in intermolecular interactions, halogen atoms are known as electron-donating groups carrying partial negative charges in molecules due to its high electronegativity, but they can counterintuitively act as Lewis acids and bind with Lewis bases in the form of a halogen bond. The unsettling issue regarding the nature of the halogen bonding is whether the electrostatics or charge transfer interaction dominates. The recently proposed σ-hole concept nicely reinforces the role of electrostatic attraction. Also, good correlations between the halogen bonding strength and the interaction energy from the simple point-charge model have been found. This leads to the claim that there is no need to invoke the charge transfer concept in the halogen bond. But there is alternative evidence supporting the importance of charge transfer interaction. Here, we visited a series of prominent halogen bonded complexes of the types YC-X···Z (X = Br, I; Y = F, Cl, Br; Z = F, Cl, Br, I, NMe) with the block-localized wave function (BLW) method at the M06-2X-D3/6-311+G(d,p) (def2-SVP for iodine) level of theory. As the simplest variant of ab initio valence bond (VB) theory, the BLW method is unique in the strict localization of electrons within interacting moieties, allowing for quantitative evaluation of the charge transfer effect on geometries, spectral properties, and energetics in halogen bonding complexes. By comparing the halogen bonding complexes with and without the charge transfer interaction, we proved that the charge transfer interaction significantly shortens the X···Z bonding distance and stretches the C-X bonds. But the shortening of the halogen bonding results in the less favorable steric effect, which is composed of Pauli repulsion, electrostatics, and electron correlation. There are approximate linear correlations between the charge transfer effect and binding energy and between bonding distance and binding energy. These correlations may lead to the illusion that the charge transfer interaction is unimportant or irrelevant, but further analyses showed that the inclusion of charge transfer is critical for the proper description of the halogen bonding, as considering only electrostatics and polarization leads to only about 45-60% of the binding strengths and much elongated bonding distances.
卤键在超分子组装和晶体工程中的应用受到了广泛关注,它在化学和生物过程以及合理药物设计中的意义和潜力也受到了广泛关注。特别地,在分子间相互作用中,由于卤素原子的高电负性,卤素原子被认为是电子供体基团,带有部分负电荷,但它们可以反直觉地充当路易斯酸,并以卤键的形式与路易斯碱结合。关于卤键性质的令人不安的问题是静电相互作用还是电荷转移相互作用占主导地位。最近提出的 σ-hole 概念很好地加强了静电吸引的作用。此外,还发现卤键强度与简单点电荷模型的相互作用能之间存在良好的相关性。这导致人们声称在卤键中不需要引入电荷转移概念。但是,有替代证据支持电荷转移相互作用的重要性。在这里,我们使用 M06-2X-D3/6-311+G(d,p)(碘的 def2-SVP)理论水平的块局部波函数(BLW)方法,研究了一系列类型为 YC-X···Z(X = Br,I;Y = F,Cl,Br;Z = F,Cl,Br,I,NMe)的突出卤键复合物。作为从头算价键(VB)理论的最简单变体,BLW 方法在相互作用部分内电子的严格定域化方面是独一无二的,允许对卤键复合物中的电荷转移效应对几何形状、光谱性质和能量学进行定量评估。通过比较具有和不具有电荷转移相互作用的卤键复合物,我们证明电荷转移相互作用显著缩短了 X···Z 键的距离并拉伸了 C-X 键。但是,卤键的缩短导致了不太有利的空间位阻效应,该效应由 Pauli 排斥、静电和电子相关组成。电荷转移效应与结合能之间以及键合距离与结合能之间存在近似线性相关性。这些相关性可能会导致电荷转移相互作用不重要或不相关的错觉,但进一步的分析表明,包含电荷转移对于正确描述卤键至关重要,因为仅考虑静电和极化只能产生大约 45-60%的结合强度和更长的键长。