Shin Myeong-Cheol, Lee Young-Jae, Kim Dong-Hyeon, Jung Seung-Woo, Schweitz Michael A, Shin Weon Ho, Oh Jong-Min, Park Chulhwan, Koo Sang-Mo
Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.
Department of Electronic Materials Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555, Japan.
Materials (Basel). 2021 Mar 8;14(5):1296. doi: 10.3390/ma14051296.
In this study, static induction transistors (SITs) with beta gallium oxide (β-GaO) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The GaO films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cmVs). The gate leakage current is as low as 1.0 × 10 A at V = 10 V by the depletion layer formed between n-GaO and p-epi SiC at the gate region with a PN heterojunction. The UV/O-treated SITs exhibit higher (approximately 1.64 × 10 times) drain current (V = 12 V) and on/off ratio (4.32 × 10) than non-treated control devices.
在本研究中，具有β-氧化镓（β-GaO）沟道的静电感应晶体管（SIT）通过射频溅射生长在p型外延碳化硅（SiC）层上。对GaO薄膜进行紫外/臭氧处理，这导致X射线光电子能谱数据中的氧空位减少、表面粗糙度降低（3.51 nm）和电阻率降低（319 Ω·cm），以及迁移率提高（4.01 cm²/Vs）。通过在栅极区域的n-GaO和p型外延SiC之间形成具有PN异质结的耗尽层，栅极漏电流在V = 10 V时低至1.0×10⁻⁶ A。经过紫外/臭氧处理的SIT在V = 12 V时表现出比未处理的对照器件更高（约1.64×10³倍）的漏极电流和开/关比（4.32×10⁵）。
