Lee Young-Jae, Schweitz Michael A, Oh Jong-Min, Koo Sang-Mo
Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.
Materials (Basel). 2020 Jan 16;13(2):434. doi: 10.3390/ma13020434.
GaO/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing GaO thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of GaO layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of β-GaO {(-201), (-401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N-annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the GaO film and GaO-metal interface.
通过射频磁控溅射沉积GaO薄膜制备了GaO/4H-SiC n-n同型异质结二极管。研究了退火气氛对GaO层薄膜质量和电学性能的影响。X射线衍射（XRD）分析表明，β-GaO不同晶面{(-201)、(-401)和(002)}的峰强度显著增加。X射线光电子能谱（XPS）测量表明，高温退火下氧的原子比增加。此外，由于GaO薄膜和GaO-金属界面上与氧相关的陷阱和空位减少，N退火二极管表现出更大的整流比和更低的热激活能。
