Zhang Shiyu, Liu Zeng, Liu Yuanyuan, Zhi Yusong, Li Peigang, Wu Zhenping, Tang Weihua
Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Micromachines (Basel). 2021 Mar 3;12(3):259. doi: 10.3390/mi12030259.
In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) GaO crystal substrate. At the current stage, for high resistance un-doped GaO films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (), Schottky barrier height (ϕB), the ideal factor (), series resistance () and the carrier concentration () by analyzing the current density-voltage (J-V) and capacitance-voltage (C-V) curves of the GaO-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.
在本工作中，基于边缘限定膜进给生长（EFG）的GaO晶体衬底制备并展示了肖特基势垒二极管（SBD）。在当前阶段，对于高电阻未掺杂的GaO薄膜和/或块状衬底，使用传统的霍尔测量难以获得载流子浓度（以及其他电学参数）。因此，我们通过系统地分析基于GaO的SBD的电流密度 - 电压（J - V）和电容 - 电压（C - V）曲线，提取了诸如导通电阻（）、肖特基势垒高度（ϕB）、理想因子（）、串联电阻（）和载流子浓度（）等电学参数。本文展示了详细的测量和理论分析。
