Zhou Xinlong, Yang Jining, Zhang Hao, Liu Yinchi, Xie Genran, Liu Wenjun
School of Microelectronics, Fudan University, Shanghai 200433, China.
Nanomaterials (Basel). 2024 Jun 5;14(11):978. doi: 10.3390/nano14110978.
In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the -GaO Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to investigate the influence of the relative positions of field plates (FPs) and ion implantation on the device performance. The device with the FP of 15 μm and the ion implantation at the edge of the Schottky electrode exhibited a breakdown voltage () of 1616 V, a specific on-resistance () of 5.11 mΩ·cm, a power figure of merit (PFOM) of 0.511 GW/cm, and a reverse current density of 1.2 × 10 A/cm @ -1000 V. Compared to the control device, although the increased by 1 mΩ·cm, the of the device increased by 183% and the PFOM increased by 546.8%. Moreover, the reverse leakage current of the device with the FP and NIET structure decreased by three orders of magnitude. The TCAD simulation revealed that the peak electric field at the interface decreased from 7 MV/cm @ -500 V to 4.18 MV/cm @ -1000 V. These results demonstrate the great potential for the -GaO SBD with a FP and NIET structure in power electronic applications.
在本工作中，通过采用场板（FP）和氮离子注入边缘终端（NIET）结构，极大地改善了β-GaO肖特基势垒二极管（SBD）的电学性能。制备了十个垂直SBD样品，以研究场板（FP）的相对位置和离子注入对器件性能的影响。具有15μm场板且在肖特基电极边缘进行离子注入的器件，其击穿电压（Vbr）为1616V，比导通电阻（Ron）为5.11mΩ·cm，功率优值（PFOM）为0.511GW/cm²，在-1000V时反向电流密度为1.2×10⁻⁶A/cm²。与对照器件相比，尽管Ron增加了1mΩ·cm，但该器件的Vbr增加了183%，PFOM增加了546.8%。此外，具有FP和NIET结构的器件的反向漏电流降低了三个数量级。TCAD模拟表明，界面处的峰值电场从-500V时的7MV/cm降至-1000V时的4.18MV/cm。这些结果证明了具有FP和NIET结构的β-GaO SBD在功率电子应用中的巨大潜力。
