用碲化铋纳米线修饰的高增益宽带吸收石墨烯光电探测器。

Yoo Tae Jin, Kim Wan Sik, Chang Kyoung Eun, Kim Cihyun, Kwon Min Gyu, Jo Ji Young, Lee Byoung Hun

Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.

School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea.

Nanomaterials (Basel). 2021 Mar 17;11(3):755. doi: 10.3390/nano11030755.

A graphene photodetector decorated with BiTe nanowires (NWs) with a high gain of up to 3 × 10 and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/BiTe nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/BiTe NWs junction. Eventually, with low bandgap BiTe NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).

一种装饰有碲化铋纳米线（NWs）的石墨烯光电探测器已被证明具有高达3×10的高增益和宽带宽窗口（400 - 2200纳米）。与使用石墨烯/碲化铋纳米板结的光电探测器相比，光电导增益提高了两个数量级。此外，还研究了石墨烯/碲化铋纳米线结处光电流产生的位置。最终，通过低带隙碲化铋纳米线和石墨烯结，在2200纳米（~0.09毫安/瓦）处光响应度提高了200%。