基于 CVD 生长的石墨烯和 PbS 量子点的具有超高响应率的红外探测器。
Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity.
机构信息
Department of Applied Physics and Materials, Research Centre, The Hong Kong Polytechnic University, Hong Kong, China.
出版信息
Adv Mater. 2012 Nov 14;24(43):5878-83. doi: 10.1002/adma.201202220. Epub 2012 Aug 31.
Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.
基于单层 CVD 生长的石墨烯和 PbS 量子点的红外探测器，通过溶液处理制备，在红外光照射下表现出高达 10^7 A/W 的超高响应率。在柔性塑料衬底上制造的器件具有出色的弯曲稳定性。光响应归因于量子点中产生的负电荷引起的石墨烯薄膜中的场效应掺杂。
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