Meng Shuolei, Chen Qianyuan, Lin Hongjian, Zhou Feng, Gong Youning, Pan Chunxu, Lu Shunbin
International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen 518060, China.
School of Physics and Technology, Wuhan University, 299 Bayi Rd, Wuhan 430072, China.
Nanomaterials (Basel). 2021 Mar 9;11(3):687. doi: 10.3390/nano11030687.
A simple and effective approach based on the liquid phase exfoliation (LPE) method has been put forward for synthesizing boron quantum dots (BQDs). By adjusting the interactions between bulk boron and various solvents, the average diameter of produced BQDs is about 7 nm. The nonlinear absorption (NLA) responses of as-prepared BQDs have been systematically studied at 515 nm and 1030 nm. Experimental results prove that BQDs possess broadband saturable absorption (SA) and good third-order nonlinear optical susceptibility, which are comparable to graphene. The fast relaxation time and slow relaxation time of BQDs at 515 nm and 1030 nm are about 0.394-5.34 ps and 4.45-115 ps, respectively. The significant ultrafast nonlinear optical properties can be used in optical devices. Here, we successfully demonstrate all-optical diode application based on BQDs/ReS tandem structure. The findings are essential for understanding the nonlinear optical properties in BQDs and open a new pathway for their applications in optical devices.
提出了一种基于液相剥离（LPE）法的简单有效的硼量子点（BQDs）合成方法。通过调节块状硼与各种溶剂之间的相互作用，所制备的BQDs的平均直径约为7nm。在515nm和1030nm波长下系统研究了所制备的BQDs的非线性吸收（NLA）响应。实验结果表明，BQDs具有宽带饱和吸收（SA）和良好的三阶非线性光学极化率，与石墨烯相当。BQDs在515nm和1030nm波长下的快弛豫时间和慢弛豫时间分别约为0.394 - 5.34ps和4.45 - 115ps。其显著的超快非线性光学性质可用于光学器件。在此，我们成功展示了基于BQDs/ReS串联结构的全光二极管应用。这些发现对于理解BQDs中的非线性光学性质至关重要，并为其在光学器件中的应用开辟了一条新途径。
