Gedi Sreedevi, Minnam Reddy Vasudeva Reddy, Alhammadi Salh, Park Hyeonwook, Jang Chelim, Park Chinho, Kim Woo Kyoung
School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 38541, Korea.
Nanomaterials (Basel). 2021 Mar 18;11(3):767. doi: 10.3390/nano11030767.
Tin sulfide polymorph (π-SnS) nanoparticles exhibit promising optoelectrical characteristics for photovoltaic and hydrogen production performance, mainly because of the possibility of tuning their properties by adjusting the synthesis conditions. This study demonstrates a chemical approach to synthesize π-SnS nanoparticles and the engineering of their properties by altering the Sn precursor concentration (from 0.04 M to 0.20 M). X-ray diffraction and Raman studies confirmed the presence of pure cubic SnS phase nanoparticles with good crystallinity. SEM images indicated the group of cloudy shaped grains, and XPS results confirmed the presence of Sn and S in the synthesized nanoparticles. Optical studies revealed that the estimated energy bandgap values of the as-synthesized π-SnS nanoparticles varied from 1.52 to 1.68 eV. This work highlights the effects of the Sn precursor concentration on the properties of the π-SnS nanoparticles and describes the bandgap engineering process. Optimized π-SnS nanoparticles were used to deposit nanocrystalline π-SnS thin films using the drop-casting technique, and their physical properties were improved by annealing (300 °C for 2 h).
硫化锡多晶型物(π-SnS)纳米颗粒在光伏和制氢性能方面展现出有前景的光电特性,这主要是因为通过调整合成条件来调节其性能具有可能性。本研究展示了一种合成π-SnS纳米颗粒的化学方法以及通过改变锡前驱体浓度(从0.04 M到0.20 M)对其性能进行调控。X射线衍射和拉曼研究证实了存在具有良好结晶性的纯立方相SnS纳米颗粒。扫描电子显微镜图像显示出云雾状晶粒群,X射线光电子能谱结果证实了合成的纳米颗粒中存在锡和硫。光学研究表明,合成的π-SnS纳米颗粒的估计能带隙值在1.52至1.68 eV之间变化。这项工作突出了锡前驱体浓度对π-SnS纳米颗粒性能的影响,并描述了能带隙调控过程。使用滴铸技术将优化后的π-SnS纳米颗粒用于沉积纳米晶π-SnS薄膜,并且通过退火(300°C,2小时)改善了它们的物理性能。