Akhtar Athar N, Murtaza G, Shafique M Ahsan, Haidyrah Ahmed S
Centre for Advanced Studies in Physics, GC University, Lahore 54000, Pakistan.
Nuclear and Radiological Control Unit, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia.
Polymers (Basel). 2021 Mar 22;13(6):973. doi: 10.3390/polym13060973.
In this work, the effect of ion bombardment on the optical properties of Polymethylmethacrylate (PMMA) was studied. Polymer samples were implanted with 500 keV Cu ions with a fluence ranging from 1 × 10 to 1 × 10 ions/cm. X-ray Diffractometer (XRD) study indicated a relatively lower variation with a higher dose of ions. Fourier Transform Infrared (FTIR) spectra exhibited that with the implantation of Cu ions the intensity of existing bands decreases, while the result confirms the existence of a C=C group. The pristine and ion-implanted samples were also investigated using photoluminescence (PL) and Ultra Violet-Visible (UV-VIS) spectra. The optical band gap (E) was observed up to 3.05 eV for the implanted samples, while the pristine sample exhibited a wide energy-gap up to ~3.9 eV. The change in the optical gap indicated the presence of a gradual phase transition for the polymer blends. The dielectric measurements of the pristine and Cu-implanted PMMA were investigated in the 10 Hz to 2 GHz frequency range. It was found that the implanted samples showed a significant decrease in the value of the dielectric constant. The value of the dielectric constant and dielectric loss of the PMMA and Cu-implanted samples at a 1-kHz frequency were found to be ~300 and 29, respectively. The modification of the PMMA energy bandgap in the current research suggested the potential use of Cu implanted PMMA in the field of optical communications and flexible electronic devices.
在本工作中,研究了离子轰击对聚甲基丙烯酸甲酯(PMMA)光学性能的影响。用能量为500 keV的铜离子注入聚合物样品,注入剂量范围为1×10至1×10离子/cm。X射线衍射仪(XRD)研究表明,较高剂量的离子引起的变化相对较小。傅里叶变换红外(FTIR)光谱显示,随着铜离子的注入,现有谱带的强度降低,同时该结果证实了C=C基团的存在。还使用光致发光(PL)和紫外-可见(UV-VIS)光谱对原始样品和离子注入样品进行了研究。注入样品的光学带隙(E)高达3.05 eV,而原始样品的能隙较宽,高达约3.9 eV。光学带隙的变化表明聚合物共混物存在逐渐的相变。在10 Hz至2 GHz频率范围内研究了原始PMMA和铜注入PMMA的介电性能。发现注入样品的介电常数显著降低。在1 kHz频率下,PMMA和铜注入样品的介电常数和介电损耗值分别约为300和29。当前研究中PMMA能带隙的改性表明铜注入PMMA在光通信和柔性电子器件领域具有潜在应用。