Kong Xiang-Peng, Jiang Tao, Gao JiaoJiao, Shi Xianbiao, Shao Jian, Yuan Yunhuan, Qiu Hua-Jun, Zhao WeiWei
Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China.
Shenzhen Key Laboratory of Flexible Printed Electronics Technology, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China.
J Phys Chem Lett. 2021 Apr 22;12(15):3740-3748. doi: 10.1021/acs.jpclett.1c00238. Epub 2021 Apr 12.
Topological materials with robust topological surface states appear to be well-suited as electrochemical catalysts. However, few studies have been published on the development of non-noble metal topological catalysts, most likely because the topological properties tend to be attributed to the and orbital electrons, while transition-metal catalysis mainly involves orbital electrons. Herein, we proposed a topological semimetallic (TSM) compound, VAl, with a surface state consisting mainly of orbital electrons, as an electrocatalyst for the hydrogen evolution reaction (HER). Density functional theory (DFT) calculations showed that the surface state electrons enhanced the adsorption of H atoms. Moreover, the transfer of surface state electrons between the surface and adsorbed H atoms was optimized through nickel doping. We experimentally prepared single-crystals VAl and VNiAl alloys. Electrochemical analysis showed that not only did VNiAl outperform VAl but also it was among the best non-noble metal topological HER electrocatalysts currently available.
具有稳健拓扑表面态的拓扑材料似乎非常适合作为电化学催化剂。然而,关于非贵金属拓扑催化剂的开发,发表的研究很少,这很可能是因为拓扑性质往往归因于 和 轨道电子,而过渡金属催化主要涉及 轨道电子。在此,我们提出一种拓扑半金属(TSM)化合物VAl,其表面态主要由 轨道电子组成,作为析氢反应(HER)的电催化剂。密度泛函理论(DFT)计算表明,表面态电子增强了H原子的吸附。此外,通过镍掺杂优化了表面态电子在表面和吸附的H原子之间的转移。我们通过实验制备了单晶VAl和VNiAl合金。电化学分析表明,VNiAl不仅性能优于VAl,而且是目前最好的非贵金属拓扑HER电催化剂之一。