Wang Hanlin, Wang Ye, Ni Zhenjie, Turetta Nicholas, Gali Sai Manoj, Peng Haijun, Yao Yifan, Chen Yusheng, Janica Iwona, Beljonne David, Hu Wenping, Ciesielski Artur, Samorì Paolo
Institut de Science et d'Ingénierie Supramoléculaires, University of Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France.
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, P. R. China.
Adv Mater. 2021 May;33(20):e2008215. doi: 10.1002/adma.202008215. Epub 2021 Apr 12.
MXenes are highly conductive layered materials that are attracting a great interest for high-performance opto-electronics, photonics, and energy applications.. Their non-covalent functionalization with ad hoc molecules enables the production of stable inks of 2D flakes to be processed in thin-films. Here, the formation of stable dispersions via the intercalation of Ti C T with didecyldimethyl ammonium bromide (DDAB) yielding Ti C T -DDAB, is demonstrated. Such functionalization modulates the properties of Ti C T , as evidenced by a 0.47 eV decrease of the work function. It is also shown that DDAB is a powerful n-dopant capable of enhancing electron mobility in conjugated polymers and 2D materials. When Ti C T -DDAB is blended with poly(diketopyrrolopyrrole-co-selenophene) [(PDPP-Se)], a simultaneous increase by 170% and 152% of the hole and electron field-effect mobilities, respectively, is observed, compared to the neat conjugated polymer, with values reaching 2.0 cm V s . By exploiting the balanced ambipolar transport of the Ti C T -DDAB/PDPP-Se hybrid, complementary metal-oxide-semiconductor (CMOS) logic gates are fabricated that display well-centered trip points and good noise margin (64.6% for inverter). The results demonstrate that intercalant engineering represents an efficient strategy to tune the electronic properties of Ti C T yielding functionalized MXenes for polymer transistors with unprecedented performances and functions.
MXenes是高导电性的层状材料，在高性能光电子学、光子学和能源应用方面引起了极大的关注。它们与特定分子的非共价功能化能够制备出稳定的二维薄片油墨，用于薄膜加工。在此，展示了通过溴化二癸基二甲基铵（DDAB）插入Ti₃C₂T形成稳定的分散体，得到Ti₃C₂T -DDAB。这种功能化调节了Ti₃C₂T的性质，功函数降低0.47 eV就证明了这一点。还表明DDAB是一种强大的n型掺杂剂，能够提高共轭聚合物和二维材料中的电子迁移率。当Ti₃C₂T -DDAB与聚（二酮吡咯并吡咯-共-硒吩）[（PDPP-Se）]共混时，与纯共轭聚合物相比，空穴和电子场效应迁移率分别同时提高了170%和152%，值达到2.0 cm² V⁻¹ s⁻¹。通过利用Ti₃C₂T -DDAB/PDPP-Se混合物的平衡双极传输，制造出了互补金属氧化物半导体（CMOS）逻辑门，其显示出居中良好的翻转点和良好的噪声容限（反相器为64.6%）。结果表明，插层剂工程是一种调整Ti₃C₂T电子性质的有效策略，可产生具有前所未有的性能和功能的用于聚合物晶体管的功能化MXenes。
