Suppr超能文献

掺杂剂辅助的基质稳定化实现了n型量子点薄膜热电性能的增强。

Dopant-Assisted Matrix Stabilization Enables Thermoelectric Performance Enhancement in n-Type Quantum Dot Films.

作者信息

Nugraha Mohamad Insan, Sun Bin, Kim Hyunho, El-Labban Abdulrahman, Desai Saheena, Chaturvedi Neha, Hou Yi, Garcia de Arquer F Pelayo, Alshareef Husam N, Sargent Edward H, Baran Derya

机构信息

Physical Science and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.

出版信息

ACS Appl Mater Interfaces. 2021 Apr 28;13(16):18999-19007. doi: 10.1021/acsami.1c01886. Epub 2021 Apr 15.

Abstract

Efficient thermoelectric generators require further progress in developing n-type semiconductors that combine low thermal conductivity with high electrical conductivity. By embedding colloidal quantum dots (CQDs) in a metal halide matrix (QDMH), the metal halide matrix can enhance phonon scattering, thus suppressing thermal transport; however, simultaneously achieving high electrical conductivity in such systems has previously been limited by the deleterious impact of a large density of interfaces on charge transport. Therefore, new strategies are needed to improve charge carrier transport without sacrificing matrix-enabled low thermal transport. Here, we report the use of chemical doping in the solution state to improve electron transport while maintaining low thermal transport in QDMH films. By incorporating cesium carbonate (CsCO) salts as a dopant prior to matrix formation, we find that the dopant stabilizes the matrix in colloidal inks and enables efficient n-type doping in QDMH films. As a result, this strategy leads to an enhanced n-type thermoelectric behavior in solution-processed QDMH films near room temperature, with a thermal conductivity of 0.25 W m K-significantly lower than in prior films based on organic-ligand-cross-linked CQD films (>0.6 W m K) and spark-plasma-sintered CQD systems (>1 W m K). This study provides a pathway to developing efficient n-type thermoelectric materials with low thermal conductivity using single-step deposition and low-temperature processing.

摘要

高效的热电发电机需要在开发兼具低导热性和高导电性的n型半导体方面取得进一步进展。通过将胶体量子点(CQD)嵌入金属卤化物基质(QDMH)中,金属卤化物基质可以增强声子散射,从而抑制热传输;然而,此前在这类系统中同时实现高导电性一直受到大量界面电荷传输的有害影响的限制。因此,需要新的策略来改善电荷载流子传输,同时不牺牲基质带来的低热传输性能。在此,我们报道了在溶液状态下使用化学掺杂来改善电子传输,同时在QDMH薄膜中保持低热传输。通过在基质形成之前加入碳酸铯(CsCO)盐作为掺杂剂,我们发现该掺杂剂能稳定胶体油墨中的基质,并在QDMH薄膜中实现高效的n型掺杂。结果,这种策略在室温附近的溶液处理QDMH薄膜中导致增强的n型热电行为,其热导率为0.25 W m K,明显低于基于有机配体交联CQD薄膜(>0.6 W m K)和火花等离子烧结CQD系统(>1 W m K)的先前薄膜。这项研究为使用单步沉积和低温处理开发具有低热导率的高效n型热电材料提供了一条途径。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验