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在极端条件下的电子结构模拟中克服有限尺寸效应。

Overcoming finite-size effects in electronic structure simulations at extreme conditions.

作者信息

Dornheim Tobias, Vorberger Jan

机构信息

Center for Advanced Systems Understanding (CASUS), D-02826 Görlitz, Germany.

Helmholtz-Zentrum Dresden-Rossendorf (HZDR), D-01328 Dresden, Germany.

出版信息

J Chem Phys. 2021 Apr 14;154(14):144103. doi: 10.1063/5.0045634.

DOI:10.1063/5.0045634
PMID:33858155
Abstract

Ab initio quantum Monte Carlo methods, in principle, allow for the calculation of exact properties of correlated many-electron systems but are, in general, limited to the simulation of a finite number of electrons N under periodic boundary conditions. Therefore, an accurate theory of finite-size effects is indispensable to bridge the gap to realistic applications in the thermodynamic limit. In this work, we revisit the uniform electron gas at finite temperature, as it is relevant to contemporary research, e.g., in the field of warm dense matter. In particular, we present a new scheme to eliminate finite-size effects both in the static structure factor S(q) and in the interaction energy v, which is based on the density response formalism. We demonstrate that this method often allows us to obtain v in the thermodynamic limit within a relative accuracy of ∼0.2% from as few as N = 4 electrons without any empirical choices or knowledge of results for other values of N. Finally, we evaluate the applicability of our method upon increasing the density parameter r and decreasing the temperature T.

摘要

从头算量子蒙特卡罗方法原则上允许计算相关多电子系统的精确性质,但一般限于在周期性边界条件下对有限数量的电子(N)进行模拟。因此,精确的有限尺寸效应理论对于弥合与热力学极限下实际应用之间的差距不可或缺。在这项工作中,我们重新审视有限温度下的均匀电子气,因为它与当代研究相关,例如在温稠密物质领域。特别是,我们提出了一种新方案,基于密度响应形式主义,消除静态结构因子(S(q))和相互作用能(v)中的有限尺寸效应。我们证明,这种方法通常使我们能够从少至(N = 4)个电子中,在热力学极限下以约(0.2%)的相对精度获得(v),而无需任何经验选择或了解其他(N)值的结果。最后,我们评估了我们的方法在增加密度参数(r)和降低温度(T)时的适用性。

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