Thin-layered MoS nanoflakes vertically grown on SnO nanotubes as highly effective room-temperature NO gas sensor.

The unique properties of heterostructure materials make them become a promising candidate for high-performance room-temperature (RT) NO sensing. Herein, a p-n heterojunction consisting of two-dimensional (2D) MoS nanoflakes vertically grown on one-dimensional (1D) SnO nanotubes (NTs) was fabricated via electrospinning and subsequent hydrothermal route. The sulfur edge active sites are fully exposed in the MoS@SnO heterostructure due to the vertically oriented thin-layered morphology features. Moreover, the interface of p-n heterojunction provides an electronic transfer channel from SnO to MoS, which enables MoS act as the generous electron donor involved in NO gas senor detection. As a result, the optimized MoS@SnO-2 heterostructure presents an impressive sensitivity and selectivity for NO gas detection at RT. The response value is 34.67 (R/R) to 100 ppm, which is 26.5 times to that of pure SnO It also exhibits a fast response and recovery time (2.2 s, 10.54 s), as well as a low detection limit (10 ppb) and as long as 20 weeks of stability. This simple fabrication of high-performance sensing materials may facilitate the large-scale production of RT NO gas sensors.