Liu Lin, Zhao Jinbo, Jin Zhidong, Liu Fei, Zhao Dewen, Liu Zhengyang, Wang Fenglong, Wang Zhou, Liu Jiurong, Wu Lili
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, China.
School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
Materials (Basel). 2024 Jul 27;17(15):3714. doi: 10.3390/ma17153714.
The n-type semiconductor SnO with a wide band gap (3.6 eV) is massively used in gas-sensitive materials, but pure SnO still suffers from a high operating temperature, low response, and tardy responding speed. To solve these problems, we prepared small-sized pure SnO using hydrothermal and freeze-drying methods (SnO-FD) and compared it with SnO prepared using a normal drying method (SnO-AD). The sensor of SnO-FD had an ultra-high sensitivity to NO at 100 °C with excellent selectivity and humidity stability. The outstanding gas sensing properties are attributed to the modulation of energy band structure and the increased carrier concentration, making it more accessible for electron exchange with NO. The excellent gas sensing properties of SnO-FD indicate its tremendous potential as a NO sensor.
具有宽带隙（3.6电子伏特）的n型半导体SnO被大量用于气敏材料中，但纯SnO仍存在工作温度高、响应低和响应速度迟缓的问题。为了解决这些问题，我们采用水热法和冷冻干燥法制备了小尺寸的纯SnO（SnO-FD），并将其与采用常规干燥法制备的SnO（SnO-AD）进行了比较。SnO-FD传感器在100℃时对NO具有超高灵敏度，具有优异的选择性和湿度稳定性。其出色的气敏性能归因于能带结构的调制和载流子浓度的增加，使其更易于与NO进行电子交换。SnO-FD优异的气敏性能表明其作为NO传感器具有巨大的潜力。
