Binh Nguyen T T, Nguyen Cuong Q, Vu Tuan V, Nguyen Chuong V
Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam.
J Phys Chem Lett. 2021 Apr 29;12(16):3934-3940. doi: 10.1021/acs.jpclett.1c00682. Epub 2021 Apr 19.
Two-dimensional MoSiN is an emerging class of 2D MAN family, which has recently been synthesized in experiment. Herein, we construct ultrathin van der Waals heterostructures between graphene and a new 2D Janus MoGeSiN material and investigate their interfacial electronic properties and tunable Schottky barriers and contact types using first-principles calculations. The GR/MoGeSiN vdWHs are expected to be energetically favorable and stable. The high carrier mobility in graphene/MoGeSiN vdWHs makes them suitable for high-speed nanoelectronic devices. Furthermore, depending on the stacking patterns, either an n-type or a p-type Schottky contact is formed at the GR/MoGeSiN interface. The strain engineering and electric field can lead to the transformation from an n-type to a p-type Schottky contact or from Schottky to Ohmic contact in graphene/MoGeSiN heterostructure. These findings provide useful guidance for designing controllable Schottky nanodevices based on graphene/MoGeSiN heterostructures with high-performance.
二维MoSiN是二维材料人工神经网络家族中新兴的一类材料，最近已在实验中合成。在此，我们构建了石墨烯与一种新型二维Janus MoGeSiN材料之间的超薄范德华异质结构，并使用第一性原理计算研究了它们的界面电子特性、可调谐肖特基势垒和接触类型。预计GR/MoGeSiN范德华异质结构在能量上是有利且稳定的。石墨烯/MoGeSiN范德华异质结构中的高载流子迁移率使其适用于高速纳米电子器件。此外，根据堆叠模式，在GR/MoGeSiN界面处会形成n型或p型肖特基接触。应变工程和电场可导致石墨烯/MoGeSiN异质结构中从n型肖特基接触转变为p型肖特基接触，或从肖特基接触转变为欧姆接触。这些发现为基于高性能石墨烯/MoGeSiN异质结构设计可控肖特基纳米器件提供了有用的指导。
