Grave Daniel A, Ellis David S, Piekner Yifat, Kölbach Moritz, Dotan Hen, Kay Asaf, Schnell Patrick, van de Krol Roel, Abdi Fatwa F, Friedrich Dennis, Rothschild Avner
Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, Israel.
Department of Materials Engineering and Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be'er Sheva, Israel.
Nat Mater. 2021 Jun;20(6):833-840. doi: 10.1038/s41563-021-00955-y. Epub 2021 Apr 19.
Light absorption in strongly correlated electron materials can excite electrons and holes into a variety of different states. Some of these excitations yield mobile charge carriers, whereas others result in localized states that cannot contribute to photocurrent. The photogeneration yield spectrum, ξ(λ), represents the wavelength-dependent ratio between the contributing absorption that ultimately generates mobile charge carriers and the overall absorption. Despite being a vital material property, it is not trivial to characterize. Here, we present an empirical method to extract ξ(λ) through optical and external quantum efficiency measurements of ultrathin films. We applied this method to haematite photoanodes for water photo-oxidation, and observed that it is self-consistent for different illumination conditions and applied potentials. We found agreement between the extracted ξ(λ) spectrum and the photoconductivity spectrum measured by time-resolved microwave conductivity. These measurements revealed that mobile charge carrier generation increases with increasing energy across haematite's absorption spectrum. Low-energy non-contributing absorption fundamentally limits the photoconversion efficiency of haematite photoanodes and provides an upper limit to the achievable photocurrent that is substantially lower than that predicted based solely on absorption above the bandgap. We extended our analysis to TiO and BiVO photoanodes, demonstrating the broader utility of the method for determining ξ(λ).
强关联电子材料中的光吸收可将电子和空穴激发到各种不同状态。其中一些激发产生可移动的电荷载流子,而其他激发则导致无法对光电流有贡献的局域态。光生载流子产率谱ξ(λ)表示最终产生可移动电荷载流子的有效吸收与总吸收之间的波长依赖比率。尽管它是一种至关重要的材料特性,但对其进行表征并非易事。在此,我们提出一种通过对超薄膜进行光学和外量子效率测量来提取ξ(λ)的经验方法。我们将此方法应用于用于水光氧化的赤铁矿光阳极,并观察到它在不同光照条件和施加电势下是自洽的。我们发现提取的ξ(λ)谱与通过时间分辨微波电导率测量的光电导谱之间具有一致性。这些测量结果表明,在赤铁矿的吸收光谱范围内,可移动电荷载流子的产生随能量增加而增加。低能量的无效吸收从根本上限制了赤铁矿光阳极的光转换效率,并为可实现的光电流提供了一个上限,该上限远低于仅基于带隙以上吸收所预测的值。我们将分析扩展到TiO和BiVO光阳极,证明了该方法在确定ξ(λ)方面具有更广泛的实用性。