Suslov Dmytro, Komanec Matěj, Numkam Fokoua Eric R, Dousek Daniel, Zhong Ailing, Zvánovec Stanislav, Bradley Thomas D, Poletti Francesco, Richardson David J, Slavík Radan
Department of Electromagnetic Field, Czech Technical University in Prague, Technická 1902/2, 166 27, Prague 6, Czech Republic.
Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
Sci Rep. 2021 Apr 22;11(1):8799. doi: 10.1038/s41598-021-88065-2.
We demonstrate halving the record-low loss of interconnection between a nested antiresonant nodeless type hollow-core fiber (NANF) and standard single-mode fiber (SMF). The achieved interconnection loss of 0.15 dB is only 0.07 dB above the theoretically-expected minimum loss. We also optimized the interconnection in terms of unwanted cross-coupling into the higher-order modes of the NANF. We achieved cross-coupling as low as -35 dB into the LP[Formula: see text] mode (the lowest-loss higher-order mode and thus the most important to eliminate). With the help of simulations, we show that the measured LP[Formula: see text] mode coupling is most likely limited by the slightly imperfect symmetry of the manufactured NANF. The coupling cross-talk into the highly-lossy LP[Formula: see text] mode ([Formula: see text] dB/km in our fiber) was measured to be below -22 dB. Furthermore, we show experimentally that the anti-reflective coating applied to the interconnect interface reduces the insertion loss by 0.15 dB while simultaneously reducing the back-reflection below -40 dB over a 60 nm bandwidth. Finally, we also demonstrated an alternative mode-field adapter to adapt the mode-field size between SMF and NANF, based on thermally-expanded core fibers. This approach enabled us to achieve an interconnection loss of 0.21 dB and cross-coupling of -35 dB into the LP[Formula: see text] mode.
我们展示了将嵌套反谐振无节点型空心光纤(NANF)与标准单模光纤(SMF)之间的互连损耗降至创纪录的低水平的一半。实现的互连损耗为0.15 dB,仅比理论预期的最小损耗高0.07 dB。我们还在减少NANF高阶模式中的有害交叉耦合方面优化了互连。我们实现了低至 -35 dB的耦合到LP[公式:见原文]模式(最低损耗的高阶模式,因此消除它最为重要)。借助模拟,我们表明测量到的LP[公式:见原文]模式耦合很可能受到制造的NANF稍微不完美的对称性的限制。测量到耦合到高损耗LP[公式:见原文]模式(我们的光纤中为[公式:见原文]dB/km)的串扰低于 -22 dB。此外,我们通过实验表明,应用于互连接口的抗反射涂层可将插入损耗降低0.15 dB,同时在60 nm带宽内将背反射降低到 -40 dB以下。最后,我们还展示了一种基于热膨胀芯光纤的替代模式场适配器,用于在SMF和NANF之间适配模式场尺寸。这种方法使我们能够实现0.21 dB的互连损耗和 -35 dB的耦合到LP[公式:见原文]模式。