Zhang Yi-Yu, Zheng Yi-Xiong, Lai Jun-Yu, Seo Jung-Hun, Lee Kwang Hong, Tan Chuan Seng, An Shu, Shin Sang-Ho, Son Bongkwon, Kim Munho
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore.
Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States.
ACS Nano. 2021 May 25;15(5):8386-8396. doi: 10.1021/acsnano.0c10374. Epub 2021 Apr 28.
Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs have been built on rigid substrates, thus limiting the use of 2DEG-IPDs in flexible and wearable applications. In this paper, we have demonstrated high performance flexible AlGaN/GaN 2DEG-IPDs using AlGaN/GaN 2DEG heterostructure membranes created from 8 in. AlGaN/GaN on insulator (AlGaN/GaNOI) substrates. The interdigitated AlGaN/GaN heterostructure has been engineered to reduce dark current by disconnecting the conductive channel at the heterostructure interface. Photocurrent has been also boosted by the escaped carriers from the 2DEG layer. Therefore, the utilization of a 2DEG layer in transferrable AlGaN/GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.
基于AlGaN/GaN界面二维电子气（2DEG）的叉指式光电探测器（IPD）因其优异的光电性能，作为高灵敏度紫外（UV）光电探测器而备受关注。然而，大多数2DEG-IPD是在刚性衬底上构建的，这限制了2DEG-IPD在柔性和可穿戴应用中的使用。在本文中，我们展示了使用由8英寸绝缘层上的AlGaN/GaN（AlGaN/GaNOI）衬底制备的AlGaN/GaN 2DEG异质结构膜制成的高性能柔性AlGaN/GaN 2DEG-IPD。通过在异质结构界面处断开导电通道来设计叉指式AlGaN/GaN异质结构，以降低暗电流。来自2DEG层的逸出载流子也提高了光电流。因此，在可转移的AlGaN/GaN异质结构膜中利用2DEG层，为用于先进紫外检测系统的高性能柔性2DEG-IPD带来了巨大前景，这些系统在众多生物医学和环境应用中至关重要。
