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通过朗缪尔-布洛杰特法制备的硫化镉量子点的晶体结构和主要缺陷

Crystal Structure and Predominant Defects in CdS Quantum Dots Fabricated by the Langmuir-Blodgett Method.

作者信息

Svit Kirill A, Zarubanov Alexandr A, Duda Tatyana A, Trubina Svetlana V, Zvereva Valentina V, Fedosenko Evgeniy V, Zhuravlev Konstantin S

机构信息

Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia.

Nikolaev Institute of Inorganic Chemistry, Siberian Branch Russian Academy of Sciences, 3 Lavrentyev Ave., Novosibirsk, 630090, Russia.

出版信息

Langmuir. 2021 May 11;37(18):5651-5658. doi: 10.1021/acs.langmuir.1c00526. Epub 2021 Apr 29.

Abstract

The crystal structure and shape of the CdS quantum dots (QDs) obtained by the Langmuir-Blodgett method were studied by transmission electron microscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), and ultraviolet spectroscopy. X-ray photoelectron spectroscopy (XPS) and stationary photoluminescence spectroscopy (PL) methods were used to determine the dominant surface defects. Initially synthesized QDs within the Langmuir-Blodgett film of fatty behenic acid have a cubic structure and oblate spheroid shape, while free-standing QDs obtained after the matrix evaporation have a wurtzite structure and sphere-like shape. QDs within the matrix demonstrate a wide PL band centered at 2.3 eV corresponding to defect-assisted radiative recombination; after the matrix annealing and passivation of the QD surface in an ammonia atmosphere, the PL spectrum demonstrates a high-intensity band-edge peak together with a low-intensity defect-assisted shoulder. It was established that sulfur (V) vacancies are the dominating defects. A model of simultaneous band-edge and defect-assisted recombination through the V level was proposed.

摘要

通过透射电子显微镜、扩展X射线吸收精细结构光谱(EXAFS)和紫外光谱对采用朗缪尔-布洛杰特法制备的硫化镉量子点(QDs)的晶体结构和形状进行了研究。利用X射线光电子能谱(XPS)和稳态光致发光光谱(PL)方法确定主要的表面缺陷。最初在脂肪酸山嵛酸的朗缪尔-布洛杰特膜内合成的量子点具有立方结构和扁球形,而在基质蒸发后得到的独立量子点具有纤锌矿结构和球形。基质中的量子点表现出以2.3 eV为中心的宽PL带,对应于缺陷辅助辐射复合;在基质退火以及在氨气氛中对量子点表面进行钝化后,PL光谱显示出一个高强度的带边峰以及一个低强度的缺陷辅助肩峰。已确定硫(V)空位是主要缺陷。提出了通过V能级同时进行带边和缺陷辅助复合的模型。

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