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用于非易失性存储器的新型铟镓锑/磷化铝量子点

Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories.

作者信息

Abramkin Demid S, Atuchin Victor V

机构信息

Laboratory of Molecular Beam Epitaxy of III-V Semiconductor Compounds, Institute of Semiconductor Physics, SB RAS, 630090 Novosibirsk, Russia.

Department of Physics, Novosibirsk State University, 630090 Novosibirsk, Russia.

出版信息

Nanomaterials (Basel). 2022 Oct 27;12(21):3794. doi: 10.3390/nano12213794.

DOI:10.3390/nano12213794
PMID:36364571
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9654477/
Abstract

Non-volatile memories based on the flash architecture with self-assembled III-V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD with hole localization energy () sufficient for a long charge storage (10 years). In the present work, the hole states' energy spectrum in novel InGaSb/AlP SAQDs was analyzed theoretically with a focus on its possible application in non-volatile memories. Material intermixing and formation of strained SAQDs from a GaAlSbP, InAlSbP or an InGaSbP alloy were taken into account. Critical sizes of SAQDs, with respect to the introduction of misfit dislocation as a function of alloy composition, were estimated using the force-balancing model. A variation in SAQDs' composition together with dot sizes allowed us to find that the optimal configuration for the non-volatile memory application is GaSbP/AlP SAQDs with the 0.55-0.65 Sb fraction and a height of 4-4.5 nm, providing the value of 1.35-1.50 eV. Additionally, the hole energy spectra in unstrained InSb/AlP and GaSb/AlP SAQDs were calculated. values up to 1.65-1.70 eV were predicted, and that makes unstrained InGaSb/AlP SAQDs a prospective object for the non-volatile memory application.

摘要

基于闪存架构、以自组装III-V族量子点（SAQD）作为浮栅的非易失性存储器是通用存储器的一个潜在发展方向。该领域的核心目标是寻找一种新型SAQD，其空穴定位能（）足以实现长时间电荷存储（10年）。在本工作中，对新型InGaSb/AlP SAQD中的空穴态能谱进行了理论分析，重点关注其在非易失性存储器中的可能应用。考虑了材料混合以及由GaAlSbP、InAlSbP或InGaSbP合金形成应变SAQD的情况。使用力平衡模型估计了SAQD的临界尺寸，该尺寸与作为合金成分函数的失配位错引入有关。SAQD成分和尺寸的变化使我们发现，用于非易失性存储器应用的最佳配置是Sb分数为0.55 - 0.65且高度为4 - 4.5 nm的GaSbP/AlP SAQD，其值为1.35 - 1.50 eV。此外，还计算了无应变InSb/AlP和GaSb/AlP SAQD中的空穴能谱。预测的值高达1.65 - 1.70 eV，这使得无应变InGaSb/AlP SAQD成为非易失性存储器应用的一个潜在对象。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/5eb3c7e38687/nanomaterials-12-03794-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/00167ab19d3e/nanomaterials-12-03794-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/27f6ce333e16/nanomaterials-12-03794-g010.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/5eb3c7e38687/nanomaterials-12-03794-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/9e508a62ff6c/nanomaterials-12-03794-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/27f6ce333e16/nanomaterials-12-03794-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/ac533f29b3bd/nanomaterials-12-03794-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7c60/9654477/5eb3c7e38687/nanomaterials-12-03794-g014.jpg

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