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基于层间交换耦合的可靠且稳健的三输入加法器设计方法。

Interlayer exchange couple based reliable and robust 3-input adder design methodology.

作者信息

Mattela Venkat, Debroy Sanghamitra, Sivasubramani Santhosh, Acharyya Amit

机构信息

Advanced Embedded Systems and IC Design Laboratory, Department of Electrical Engineering, Indian Institute of Technology, Hyderabad, India.

出版信息

Nanotechnology. 2021 May 17;32(32). doi: 10.1088/1361-6528/abfcfc.

Abstract

In this paper, a novel inter-layer exchange coupled (IEC) based 3-input full adder design methodology is proposed and subsequently the architecture has been implemented on the widely accepted micromagnetic OOMMF platform. The impact of temperature on the IEC coupled full-adder design has been analyzed up to Curie temperature. It was observed that even up to Curie temperature the IEC based adder design was able to operate at sub-50 nm as contrast to dipole coupled adder design which failed at 5 K for sub 50 nm. Simulation results obtained from OOMMF micromagnetic simulator shows, the IEC based adder design was at a lower energy state as compared to the dipole coupled adder indicating a more stable system and as the temperature of the design was increased, the total energy increased resulting in reduced stability. Potential explanation for the thermodynamic stability of IEC model lies in its energetically favored architecture, such that the total energy was lower than its dipole coupled counterparts. IEC architecture demonstrates supremacy in reliability and strength enabling NML to march towards beyond CMOS devices.

摘要

本文提出了一种基于新型层间交换耦合(IEC)的三输入全加器设计方法,并随后在广泛认可的微磁学OOMMF平台上实现了该架构。已分析了温度对基于IEC耦合的全加器设计的影响,直至居里温度。据观察,即使到居里温度,基于IEC的加法器设计仍能够在低于50纳米的尺寸下运行,而偶极耦合加法器设计在低于50纳米的尺寸下于5K时就无法运行。从OOMMF微磁模拟器获得的模拟结果表明,与偶极耦合加法器相比,基于IEC的加法器设计处于更低的能量状态,这表明系统更稳定,并且随着设计温度的升高,总能量增加,导致稳定性降低。IEC模型热力学稳定性的潜在解释在于其能量上有利的架构,使得总能量低于其偶极耦合对应物。IEC架构在可靠性和强度方面表现卓越,使纳米磁逻辑能够迈向超越CMOS的器件。

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