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具有忆阻开关的有状态三输入逻辑

Stateful Three-Input Logic with Memristive Switches.

作者信息

Siemon A, Drabinski R, Schultis M J, Hu X, Linn E, Heittmann A, Waser R, Querlioz D, Menzel S, Friedman J S

机构信息

Institut für Werkstoffe der Elektrotechnik II (IWE II), RWTH Aachen University, Sommerfeldstr. 24, 52074, Aachen, Germany.

JARA-Fundamentals for Future Information Technology, Jülich, Germany.

出版信息

Sci Rep. 2019 Oct 10;9(1):14618. doi: 10.1038/s41598-019-51039-6.

DOI:10.1038/s41598-019-51039-6
PMID:31602003
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6787102/
Abstract

Memristive switches are able to act as both storage and computing elements, which make them an excellent candidate for beyond-CMOS computing. In this paper, multi-input memristive switch logic is proposed, which enables the function X OR (Y NOR Z) to be performed in a single-step with three memristive switches. This ORNOR logic gate increases the capabilities of memristive switches, improving the overall system efficiency of a memristive switch-based computing architecture. Additionally, a computing system architecture and clocking scheme are proposed to further utilize memristive switching for computation. The system architecture is based on a design where multiple computational function blocks are interconnected and controlled by a master clock that synchronizes system data processing and transfer. The clocking steps to perform a full adder with the ORNOR gate are presented along with simulation results using a physics-based model. The full adder function block is integrated into the system architecture to realize a 64-bit full adder, which is also demonstrated through simulation.

摘要

忆阻开关既能充当存储元件,又能充当计算元件,这使其成为超越互补金属氧化物半导体(CMOS)计算的理想选择。本文提出了多输入忆阻开关逻辑,它能使“X异或(Y或非Z)”功能通过三个忆阻开关一步实现。这种或非逻辑门增强了忆阻开关的能力,提高了基于忆阻开关的计算架构的整体系统效率。此外,还提出了一种计算系统架构和时钟方案,以进一步利用忆阻开关进行计算。该系统架构基于这样一种设计,即多个计算功能块相互连接,并由一个主时钟控制,该主时钟同步系统数据处理和传输。给出了使用基于物理的模型,用或非门执行一位全加器的时钟步骤以及仿真结果。全加器功能块被集成到系统架构中以实现一个64位全加器,这也通过仿真得到了验证。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/b5c92a400687/41598_2019_51039_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/5a739c04fb3a/41598_2019_51039_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/2fc015320cf0/41598_2019_51039_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/97e5a7bb2eeb/41598_2019_51039_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/fcddc46d2dda/41598_2019_51039_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/929de3d154c1/41598_2019_51039_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/c6c41f519d6f/41598_2019_51039_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/b5c92a400687/41598_2019_51039_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/5a739c04fb3a/41598_2019_51039_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/2fc015320cf0/41598_2019_51039_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/97e5a7bb2eeb/41598_2019_51039_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/fcddc46d2dda/41598_2019_51039_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/929de3d154c1/41598_2019_51039_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/c6c41f519d6f/41598_2019_51039_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7b25/6787102/b5c92a400687/41598_2019_51039_Fig7_HTML.jpg

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本文引用的文献

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Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges.基于氧化还原的电阻式开关存储器——纳米离子机制、前景与挑战
Adv Mater. 2009 Jul 13;21(25-26):2632-2663. doi: 10.1002/adma.200900375.
2
Memory leads the way to better computing.内存引领通往更好计算的道路。
Nat Nanotechnol. 2015 Mar;10(3):191-4. doi: 10.1038/nnano.2015.29.
3
Memristive devices for computing.忆阻器计算设备。
Nanoscale Adv. 2023 Feb 27;5(6):1559-1573. doi: 10.1039/d3na00025g. eCollection 2023 Mar 14.
4
Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing.基于忆阻器交叉开关实现16种布尔逻辑和全加器功能的可重构高效实现,用于超越冯·诺依曼架构的内存计算。
Adv Sci (Weinh). 2022 May;9(15):e2200036. doi: 10.1002/advs.202200036. Epub 2022 Mar 27.
5
Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing.用于超低功耗非冯·诺依曼计算的多输入内存逻辑
Micromachines (Basel). 2021 Oct 14;12(10):1243. doi: 10.3390/mi12101243.
6
Binary Addition in Resistance Switching Memory Array by Sensing Majority.通过检测多数值在电阻式开关存储器阵列中进行二进制加法
Micromachines (Basel). 2020 May 14;11(5):496. doi: 10.3390/mi11050496.
Nat Nanotechnol. 2013 Jan;8(1):13-24. doi: 10.1038/nnano.2012.240.
4
Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operations.超越冯·诺依曼——被动交叉阵列中的逻辑运算与存储运算协同进行。
Nanotechnology. 2012 Aug 3;23(30):305205. doi: 10.1088/0957-4484/23/30/305205.
5
'Memristive' switches enable 'stateful' logic operations via material implication.忆阻器开关通过材料蕴涵实现“有状态”逻辑运算。
Nature. 2010 Apr 8;464(7290):873-6. doi: 10.1038/nature08940.
6
Memristive switching mechanism for metal/oxide/metal nanodevices.金属/氧化物/金属纳米器件的忆阻开关机制
Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160. Epub 2008 Jun 15.
7
Nanoionics-based resistive switching memories.基于纳米离子学的电阻式开关存储器。
Nat Mater. 2007 Nov;6(11):833-40. doi: 10.1038/nmat2023.