Ahoulou Samuel, Perret Etienne, Nedelec Jean-Marie
Université Clermont Auvergne, Clermont Auvergne INP, CNRS, ICCF, F-63000 Clermont-Ferrand, France.
LCIS, INP, University of Grenoble Alpes, Grenoble, F-26000 Valence, France.
Nanomaterials (Basel). 2021 Apr 13;11(4):999. doi: 10.3390/nano11040999.
Silicon nanowires are attractive materials from the point of view of their electrical properties or high surface-to-volume ratio, which makes them interesting for sensing applications. However, they can achieve a better performance by adjusting their surface properties with organic/inorganic compounds. This review gives an overview of the main techniques used to modify silicon nanowire surfaces as well as characterization techniques. A comparison was performed with the functionalization method developed, and some applications of modified silicon nanowires and their advantages on those non-modified are subsequently presented. In the final words, the future opportunities of functionalized silicon nanowires for chipless tag radio frequency identification (RFID) have been depicted.
从电学性质或高表面积与体积比的角度来看,硅纳米线是很有吸引力的材料,这使得它们在传感应用中很有趣。然而,通过用有机/无机化合物调整其表面性质,它们可以实现更好的性能。本文综述了用于修饰硅纳米线表面的主要技术以及表征技术。对已开发的功能化方法进行了比较,随后介绍了修饰硅纳米线的一些应用及其相对于未修饰硅纳米线的优势。最后,描述了功能化硅纳米线在无芯片标签射频识别(RFID)方面的未来机遇。