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基于跑道型微谐振器的绝缘体上3C碳化硅平台电光移相器

Racetrack microresonator based electro-optic phase shifters on a 3C silicon-carbide-on-insulator platform.

作者信息

Fan Tianren, Wu Xi, Vangapandu Sai R M, Hosseinnia Amir H, Eftekhar Ali A, Adibi Ali

出版信息

Opt Lett. 2021 May 1;46(9):2135-2138. doi: 10.1364/OL.422560.

Abstract

We report, to the best of our knowledge, the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C silicon-carbide-on-insulator (SiCOI) platform working at near-infrared wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality ($ Q $) factors are $\sim! {30,!000}$. We show voltage-length product (${{V}{\pi}} \cdot {{L}{ \pi}}$) of ${118};{{\rm V}\cdot{\rm cm}}$, which corresponds to an EO coefficient ${{r}_{41}}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunable silicon carbide integrated photonic devices that are desirable for applications in nonlinear and quantum photonics over a wide bandwidth that covers visible and infrared wavelengths.

摘要

据我们所知,我们首次展示了基于绝缘体上3C碳化硅(SiCOI)平台上的跑道型微谐振器的集成电光(EO)移相器,其工作在近红外波长。通过在垂直于波导平面的晶轴上施加直流电压,我们观察到了加载品质因数($Q$)约为30,000的跑道型微谐振器产生的光学相移。我们展示了118 V·cm的电压-长度积(${{V}{\pi}} \cdot {{L}{ \pi}}$),这对应于2.6 pm/V的电光系数${{r}_{41}}$。SiCOI平台可用于实现可调谐碳化硅集成光子器件,这些器件对于覆盖可见光和红外波长的宽带宽非线性和量子光子学应用来说是很有必要的。

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