Zhang Xinyi, Lu Kuankuan, Xu Zhuohui, Ning Honglong, Lin Zimian, Qiu Tian, Yang Zhao, Zeng Xuan, Yao Rihui, Peng Junbiao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Guangxi Key Lab of Agricultural Resources Chemistry and Biotechnology, Yulin Normal University, Yulin 537000, China.
Membranes (Basel). 2021 Apr 30;11(5):337. doi: 10.3390/membranes11050337.
High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. In this work, using rare earth dopant, neodymium-doped indium-zinc-oxide (NdIZO) film was optimized as the active layer of TFT with Cu source and drain (S/D) electrodes. Under the guidance of the Taguchi orthogonal design method from Minitab software, the semiconductor characteristics were evaluated by microwave photoconductivity decay (μ-PCD) measurement. The results show that moderate oxygen concentration (~5%), low sputtering pressure (≤5 mTorr) and annealing temperature (≤300 °C) are conducive to reducing the shallow localized states of NdIZO film. The optimized annealing temperature of this device configuration is as low as 250 °C, and the contact resistance (R is modulated by gate voltage (V) instead of a constant value when annealed at 300 °C. It is believed that the adjustable R with V is the key to keeping both high mobility and compensation of the threshold voltage (V). The optimal device performance was obtained at 250 °C with an I/I ratio of 2.89 × 10, a saturation mobility (μ) of 24.48 cm/(V·s) and V of 2.32 V.
具有铜（Cu）电极的高性能非晶氧化物半导体薄膜晶体管（AOS-TFT）对于下一代大尺寸、高刷新率和高分辨率平板显示技术具有重要意义。在这项工作中，使用稀土掺杂剂，对掺钕铟锌氧化物（NdIZO）薄膜进行优化，作为具有Cu源极和漏极（S/D）电极的TFT的有源层。在Minitab软件的田口正交设计方法指导下，通过微波光电导衰减（μ-PCD）测量来评估半导体特性。结果表明，适度的氧浓度（~5%）、低溅射压力（≤5 mTorr）和退火温度（≤300 °C）有利于降低NdIZO薄膜的浅局域态。这种器件结构的优化退火温度低至250 °C，并且当在300 °C退火时，接触电阻（R）由栅极电压（V）调制而不是恒定值。据信，R随V可调是保持高迁移率和阈值电压（V）补偿的关键。在250 °C下获得了最佳器件性能，I/I比为2.89×10，饱和迁移率（μ）为24.48 cm²/(V·s)，V为2.32 V。
