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通过纯原子层沉积技术在室温下生长二氧化硅薄膜。

SiO thin film growth through a pure atomic layer deposition technique at room temperature.

作者信息

Arl D, Rogé V, Adjeroud N, Pistillo B R, Sarr M, Bahlawane N, Lenoble D

机构信息

Luxembourg Institute of Science and Technology 41 rue du Brill L-4422 Luxembourg

出版信息

RSC Adv. 2020 May 11;10(31):18073-18081. doi: 10.1039/d0ra01602k. eCollection 2020 May 10.

DOI:10.1039/d0ra01602k
PMID:35517241
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9053598/
Abstract

In this study, less contaminated and porous SiO films were grown ALD at room temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of the reaction was demonstrated by tuning the exposure of SiCl, NH and HO. This pure ALD approach generated porous oxide layers with very low chloride contamination in films. This optimized RT-ALD process could be applied to a wide range of substrates that need to be 3D-coated, similar to mesoporous structured membranes.

摘要

在本研究中，在室温下通过原子层沉积（ALD）生长了污染较少且多孔的SiO薄膜。除了众所周知的氨的催化作用外，通过调节SiCl、NH和HO的暴露量证明了反应的自限性。这种纯ALD方法在薄膜中产生了氯化物污染极低的多孔氧化层。这种优化的室温ALD工艺可应用于广泛的需要进行三维涂层的基材，类似于介孔结构膜。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/646c7ffa89d5/d0ra01602k-f10.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/4af66c082dd2/d0ra01602k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/a350ef974f0a/d0ra01602k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/e498b7cae3ed/d0ra01602k-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/fd83b0c4f4ce/d0ra01602k-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/a3b2daed15b3/d0ra01602k-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/b431391cc997/d0ra01602k-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/646c7ffa89d5/d0ra01602k-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/27ef89cd012c/d0ra01602k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/bee6c777eb21/d0ra01602k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/ec635fb35a42/d0ra01602k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/4af66c082dd2/d0ra01602k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/a350ef974f0a/d0ra01602k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/e498b7cae3ed/d0ra01602k-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/fd83b0c4f4ce/d0ra01602k-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/a3b2daed15b3/d0ra01602k-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/b431391cc997/d0ra01602k-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ec11/9053598/646c7ffa89d5/d0ra01602k-f10.jpg

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