Kalam Kristjan, Rammula Raul, Ritslaid Peeter, Käämbre Tanel, Link Joosep, Stern Raivo, Vinuesa Guillermo, Dueñas Salvador, Castán Helena, Tamm Aile, Kukli Kaupo
Institute of Physics, University of Tartu, W. Ostwaldi tn 1, 50411 Tartu, Estonia.
National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia.
Nanotechnology. 2021 May 26;32(33). doi: 10.1088/1361-6528/abfee9.
Atomic layer deposition method was used to grow thin films consisting of ZrOand MnOlayers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO, while the manganese oxide was shown to consist of cubic MnOand tetragonal MnOphases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.
采用原子层沉积法生长由ZrO和MnO层组成的薄膜。研究了在300℃下沉积的薄膜的磁性能和电性能。研究了乙酰丙酮锰(III)和臭氧工艺的一些沉积特性,如生长速率对沉积温度和薄膜结晶度的依赖性。所有薄膜在沉积态时均为部分结晶。氧化锆包含ZrO的立方相和四方相,而氧化锰显示由立方MnO和四方MnO相组成。所有薄膜均表现出具有磁滞的非线性饱和磁化以及电阻开关特性。