通过原子层沉积法制备的铪和氧化铁薄膜纳米层压板中的记忆效应
Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition.
作者信息
Kalam Kristjan, Otsus Markus, Kozlova Jekaterina, Tarre Aivar, Kasikov Aarne, Rammula Raul, Link Joosep, Stern Raivo, Vinuesa Guillermo, Lendínez José Miguel, Dueñas Salvador, Castán Helena, Tamm Aile, Kukli Kaupo
机构信息
Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia.
Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia.
出版信息
Nanomaterials (Basel). 2022 Jul 28;12(15):2593. doi: 10.3390/nano12152593.
HfO and FeO thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of FeO. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO and FeO in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5-350 K, decreasing towards higher temperatures and increasing with the films' thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO layers grown alternately with magnetic FeO exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.
通过在350°C下利用四氯化铪、二茂铁和臭氧进行原子层沉积，生长出了HfO和FeO薄膜以及叠层结构。在这些薄膜中记录到了非线性、饱和和滞后的磁化现象。正如预期的那样，通过增加FeO的含量，磁化作用占主导地位。然而，在纳米叠层结构中，通过选择合适的HfO和FeO比例，矫顽力也可以得到增强。在5 - 350 K的测量温度范围内观察到了饱和磁化现象，随着温度升高而降低，并随着薄膜厚度和晶体生长而增加。矫顽力倾向于随着结晶层厚度的减小而增加。与磁性FeO交替生长的含有绝缘HfO层的薄膜在室温下既表现出电阻切换能力，又表现出磁化能力。在所有安装在Ti和TiN电极之间的氧化物中，电阻切换都是单极的。
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