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铌酸锂薄膜中高性能多模干涉仪的设计与制造。

Design and fabrication of high-performance multimode interferometer in lithium niobate thin film.

作者信息

Chen Guanyu, Ng Jun Da, Lin Hong-Lin, Zhang Gong, Gong Xiao, Danner Aaron J

出版信息

Opt Express. 2021 May 10;29(10):15689-15698. doi: 10.1364/OE.419255.

Abstract

We propose and demonstrate a type of high-performance transverse magnetic (TM) multimode interferometer (MMI) in Z-cut thin film lithium niobate (TFLN). Both 1 × 2 and 4 × 4 MMI designs are demonstrated. Simulation results show that the insertion losses (ILs) are nominally about 0.157 and 0.297 dB for the 1 × 2 and 4 × 4 MMI, respectively, with wide fabrication tolerances. Based on the designed structure, the MMIs are fabricated using an argon based induced coupled plasma (ICP) etching method in Z-cut TFLN. The measured ILs are 0.268 and 0.63 dB for these two kinds of devices. The presented TM mode MMI featuring compact size and low loss can be used for both multifunctional devices and on-chip integrated circuits on a Z-cut TFLN platform.

摘要

我们提出并展示了一种在Z切薄膜铌酸锂(TFLN)中的高性能横向磁(TM)多模干涉仪(MMI)。展示了1×2和4×4的MMI设计。仿真结果表明,对于1×2和4×4的MMI,插入损耗(IL)标称分别约为0.157 dB和0.297 dB,并且具有较宽的制造容差。基于所设计的结构,采用基于氩的感应耦合等离子体(ICP)蚀刻方法在Z切TFLN中制造MMI。这两种器件的测量插入损耗分别为0.268 dB和0.63 dB。所展示的具有紧凑尺寸和低损耗的TM模式MMI可用于Z切TFLN平台上的多功能器件和片上集成电路。

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