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通过冷结晶实现SnO(101)纳米片组装膜的晶面控制生长机制。

Facet controlled growth mechanism of SnO (101) nanosheet assembled film via cold crystallization.

作者信息

Masuda Yoshitake

机构信息

National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463-8560, Japan.

出版信息

Sci Rep. 2021 May 28;11(1):11304. doi: 10.1038/s41598-021-90939-4.

DOI:10.1038/s41598-021-90939-4
PMID:34050258
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8163760/
Abstract

Cold crystallization of SnO was realized in aqueous solutions, where crystal growth was controlled to form SnO (101) nanosheet assembled films for devices such as chemical sensors. The nanosheets grew directly on a fluorine-doped tin oxide substrate without a seed layer or a buffer layer. The nanosheets had a thickness of 5-10 nm and an in-plane size of 100-1600 nm. Moreover, the large flat surface of the (101) facet was metastable. The thickness of the SnO (101) nanosheet assembled film was approximately 800 nm, and the film had a gradient structure that contained many connected nanosheets. TEM results revealed that the predominate branch angles between any two connected nanosheets were 90° and 46.48°, corresponding to type I and type II connections, respectively. These connections were consistent with the calculations based on crystallography. Crystallographic analysis clarified the characteristic crystal growth of the SnO (101) nanosheet assembled film in the aqueous solution. Furthermore, we demonstrate that the metastable (101) facet can be exploited to control the rate of crystal growth by adjusting the etching condition.

摘要

在水溶液中实现了SnO的冷结晶,其中晶体生长得到控制,以形成用于化学传感器等器件的SnO(101)纳米片组装薄膜。纳米片直接生长在掺氟氧化锡衬底上,无需籽晶层或缓冲层。纳米片的厚度为5 - 10nm,面内尺寸为100 - 1600nm。此外,(101)晶面的大平面是亚稳的。SnO(101)纳米片组装薄膜的厚度约为800nm,且该薄膜具有包含许多相连纳米片的梯度结构。透射电子显微镜结果表明,任意两个相连纳米片之间的主要分支角分别为90°和46.48°,分别对应I型和II型连接。这些连接与基于晶体学的计算结果一致。晶体学分析阐明了SnO(101)纳米片组装薄膜在水溶液中的特征晶体生长。此外,我们证明了通过调整蚀刻条件,可以利用亚稳的(101)晶面来控制晶体生长速率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/5d9a23f16258/41598_2021_90939_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/a48952a0690d/41598_2021_90939_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/7f30e1c691c9/41598_2021_90939_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/894abe74abf4/41598_2021_90939_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/04b84f6af102/41598_2021_90939_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/399e3cbc921a/41598_2021_90939_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/edf8ed5a5aaf/41598_2021_90939_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/0e100b2aba1a/41598_2021_90939_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/b0e21bc7c50f/41598_2021_90939_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/5d9a23f16258/41598_2021_90939_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/a48952a0690d/41598_2021_90939_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/01774487cd66/41598_2021_90939_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/63fa4477ebc4/41598_2021_90939_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/eba470829d36/41598_2021_90939_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/7f30e1c691c9/41598_2021_90939_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/894abe74abf4/41598_2021_90939_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/04b84f6af102/41598_2021_90939_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/399e3cbc921a/41598_2021_90939_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/edf8ed5a5aaf/41598_2021_90939_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/0e100b2aba1a/41598_2021_90939_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/b0e21bc7c50f/41598_2021_90939_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6384/8163760/5d9a23f16258/41598_2021_90939_Fig12_HTML.jpg

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