Zhao Zhanxia, Yang Cheng, Wu Liang, Zhang Chenglong, Wang Ruixue, Ma En
Department of Physics, Shanghai University, Shanghai 200444, China.
Research Center of Resource Recycling Science and Engineering, Shanghai Polytechnic University, Shanghai 201209, China.
ACS Omega. 2021 Apr 27;6(18):11935-11942. doi: 10.1021/acsomega.1c00304. eCollection 2021 May 11.
The electrodeposition at low temperature for the direct growth of crystalline thin films without any templating agent in ionic liquid (IL) is a relatively new electrochemical synthetic strategy. This work studied the role of the deposition temperature, deposition time, and different working electrodes in the electrodeposition of crystalline Si thin films from the byproduct silicon tetrachloride in IL at low temperature. X-ray diffraction (XRD) revealed that the as-deposited Si films were crystalline at the temperature of 80 °C. Scanning electron microscopy (SEM) and Raman spectroscopy further indicated that the crystalline quality of the as-deposited silicon film was relatively the best when the electrodeposition time reached 1 h at the temperature of 100 °C; excessive electrodeposition would yield amorphous silicon on the surface of the as-deposit crystalline Si, which decreased the crystal quality of the Si film. The SEM and XRD, respectively, revealed that the crystal structure of Si yielded on e-InGa was significantly different from that produced on Ga and more impurities existed in the film. Research on the influence of these parameters on crystallinity and morphological characteristics of Si gives better control over the growth of crystalline Si thin films for specific applications.
在离子液体（IL）中，无需任何模板剂即可低温电沉积直接生长晶体薄膜，这是一种相对较新的电化学合成策略。本工作研究了沉积温度、沉积时间以及不同工作电极在低温下从离子液体中的副产物四氯化硅电沉积晶体硅薄膜过程中的作用。X射线衍射（XRD）表明，沉积态的硅膜在80°C温度下为晶体。扫描电子显微镜（SEM）和拉曼光谱进一步表明，当在100°C温度下电沉积时间达到1 h时，沉积态硅膜的晶体质量相对最佳；过度电沉积会在沉积态晶体硅表面产生非晶硅，从而降低硅膜的晶体质量。SEM和XRD分别表明，在电子铟镓（e-InGa）上生长的硅的晶体结构与在镓上生长的显著不同，且薄膜中存在更多杂质。研究这些参数对硅的结晶度和形态特征的影响，有助于更好地控制特定应用中晶体硅薄膜的生长。
