• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

使用相同的基于SiF的工艺条件通过PECVD制备的微晶和外延硅膜质量的比较研究。

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF Based Process Conditions.

作者信息

Moreno Mario, Ponce Arturo, Galindo Arturo, Ortega Eduardo, Morales Alfredo, Flores Javier, Ambrosio Roberto, Torres Alfonso, Hernandez Luis, Vazquez-Leal Hector, Patriarche Gilles, Cabarrocas Pere Roca I

机构信息

Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.

Department of Physics and Astronomy, University of Texas at San Antonio, One UTSA Circle, San Antonio, TX 78249, USA.

出版信息

Materials (Basel). 2021 Nov 17;14(22):6947. doi: 10.3390/ma14226947.

DOI:10.3390/ma14226947
PMID:34832349
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8621203/
Abstract

Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF, H and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (X), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H/SiF ratio affects the X of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest X are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction.

摘要

通过等离子体增强化学气相沉积（PECVD）在200°C下，由SiF₄、H₂和Ar的混合物制备了氢化微晶硅（µc-Si:H）和外延硅（epi-Si）薄膜。在此，两种薄膜均采用相同的沉积条件制备，以确定产生具有最大晶体分数（X）的µc-Si的条件，是否也会导致外延生长出具有最佳质量和最大晶体硅（c-Si）分数的epi-Si薄膜。这两个特性对于薄膜晶体管（TFT）、薄膜太阳能电池和新型3D器件的发展都很重要，因为外延硅薄膜可以以选择性方式生长或蚀刻。因此，我们已经明确，H₂/SiF₄比率会影响µc-Si的X、外延硅薄膜中的c-Si分数以及外延硅/晶体硅界面的结构。拉曼光谱和紫外可见椭圆偏振光谱用于评估沉积层的晶体体积分数（Xc）和成分，而薄膜结构则通过高分辨率透射电子显微镜（HRTEM）进行检查。值得注意的是，与制备具有最佳质量和最大c-Si分数的外延硅薄膜的条件相比，产生具有最大X的µc-Si的条件有所不同。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/7ffd6124099b/materials-14-06947-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/a98fe9344206/materials-14-06947-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/8084a9399af9/materials-14-06947-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/a0fe16205cda/materials-14-06947-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/26f68cea1afb/materials-14-06947-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/eae8881b1606/materials-14-06947-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/975e03eb527e/materials-14-06947-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/7ffd6124099b/materials-14-06947-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/a98fe9344206/materials-14-06947-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/8084a9399af9/materials-14-06947-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/a0fe16205cda/materials-14-06947-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/26f68cea1afb/materials-14-06947-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/eae8881b1606/materials-14-06947-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/975e03eb527e/materials-14-06947-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4246/8621203/7ffd6124099b/materials-14-06947-g007.jpg

相似文献

1
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF Based Process Conditions.使用相同的基于SiF的工艺条件通过PECVD制备的微晶和外延硅膜质量的比较研究。
Materials (Basel). 2021 Nov 17;14(22):6947. doi: 10.3390/ma14226947.
2
Structure and 1/f noise of boron doped polymorphous silicon films.硼掺杂多晶硅薄膜的结构与1/f噪声
Nanotechnology. 2008 Feb 27;19(8):085706. doi: 10.1088/0957-4484/19/8/085706. Epub 2008 Feb 4.
3
Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.低温等离子体增强化学气相沉积法在砷化镓上外延生长硅：III-V族/硅集成的新范例
Sci Rep. 2016 May 11;6:25674. doi: 10.1038/srep25674.
4
A novel method to make boron-doped microcrystalline silicon thin films with optimal crystalline volume fraction for thin films solar cell applications.一种制备具有适合薄膜太阳能电池应用的最佳晶体体积分数的硼掺杂微晶硅薄膜的新方法。
J Nanosci Nanotechnol. 2014 Dec;14(12):9388-94. doi: 10.1166/jnn.2014.10122.
5
Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.本征非晶硅/晶体硅异质结太阳电池界面本征氧化层的演变及其对电池性能的影响。
ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26522-9. doi: 10.1021/acsami.5b07709. Epub 2015 Nov 24.
6
Investigation of structural disorder using electron temperature in VHF-PECVD on hydrogenated amorphous silicon films for thin film solar cell applications.利用电子温度研究用于薄膜太阳能电池应用的氢化非晶硅薄膜上甚高频等离子体增强化学气相沉积中的结构无序。
J Nanosci Nanotechnol. 2014 Oct;14(10):8110-6. doi: 10.1166/jnn.2014.9451.
7
N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.通过热丝化学气相沉积法添加HCl在玻璃上沉积的无非晶硅的N型晶体硅薄膜。
J Nanosci Nanotechnol. 2011 Sep;11(9):8242-5. doi: 10.1166/jnn.2011.5040.
8
Role of SiN Barrier Layer on the Performances of Polyimide Ga₂O₃-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells.氮化硅阻挡层对聚酰亚胺掺杂氧化镓的氧化锌p-i-n氢化非晶硅薄膜太阳能电池性能的作用
Materials (Basel). 2014 Feb 7;7(2):948-962. doi: 10.3390/ma7020948.
9
Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.通过低温化学气相沉积和后退火处理改善异质结太阳能电池的非晶硅/晶体硅界面钝化
Phys Chem Chem Phys. 2014 Oct 7;16(37):20202-8. doi: 10.1039/c4cp02212b.
10
Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.沉积速率对等离子体增强 CVD 外延硅结构性能的影响。
Sci Rep. 2017 Mar 6;7:43968. doi: 10.1038/srep43968.

本文引用的文献

1
Fully Bottom-Up Waste-Free Growth of Ultrathin Silicon Wafer via Self-Releasing Seed Layer.通过自释放籽晶层实现超薄硅片的完全自下而上无废料生长。
Adv Mater. 2021 Oct;33(41):e2103708. doi: 10.1002/adma.202103708. Epub 2021 Sep 2.
2
Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.低温等离子体增强化学气相沉积法在砷化镓上外延生长硅：III-V族/硅集成的新范例
Sci Rep. 2016 May 11;6:25674. doi: 10.1038/srep25674.
3
Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures.
J Chem Phys. 2014 Jun 21;140(23):234706. doi: 10.1063/1.4883503.