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利用复阻抗谱对织构化铁电多晶硫碘锑化物进行电学性质分析。

Electrical Property Analysis of Textured Ferroelectric Polycrystalline Antimony Sulfoiodide Using Complex Impedance Spectroscopy.

作者信息

Starczewska Anna, Toroń Bartłomiej, Szperlich Piotr, Nowak Marian

机构信息

Institute of Physics-Center for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland.

出版信息

Materials (Basel). 2021 May 15;14(10):2579. doi: 10.3390/ma14102579.

DOI:10.3390/ma14102579
PMID:34063548
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8156861/
Abstract

Antimony sulfoiodide (SbSI) is a ferroelectric semiconductor with many interesting physical properties (optical, photoconductive, ferroelectric, piezoelectric, etc.). The electrical properties of textured polycrystalline SbSI obtained by the rapid cooling of a melted mass in liquid nitrogen are presented in this work using ac impedance spectroscopy over a wide temperature range (275-500 K) in the frequency range of 1 Hz to 100 kHz. Detailed studies of the impedance *(ω), conductivity *(ω), electric modulus (ω), and dielectric permittivity ε(ω) of this material were performed using complex impedance spectroscopy for the first time. This study showed that the impedance and related parameters are strongly dependent on temperature. The internal domain structure and the presence of grain boundaries in textured polycrystalline SbSI explain the obtained results.

摘要

硫碘锑（SbSI）是一种具有许多有趣物理特性（光学、光电导、铁电、压电等）的铁电半导体。本文通过交流阻抗谱在275 - 500K的宽温度范围以及1Hz至100kHz的频率范围内，展示了通过在液氮中快速冷却熔融体获得的织构化多晶SbSI的电学特性。首次使用复阻抗谱对该材料的阻抗Z(ω)、电导率σ(ω)、电模量M(ω)和介电常数ε(ω)进行了详细研究。该研究表明，阻抗及相关参数强烈依赖于温度。织构化多晶SbSI中的内畴结构和晶界的存在解释了所获得的结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ae6/8156861/ac211d5fe616/materials-14-02579-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ae6/8156861/96953101a89a/materials-14-02579-g010.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ae6/8156861/b71b4315a18f/materials-14-02579-g012.jpg
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本文引用的文献

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