Vlčková Živcová Zuzana, Bouša Milan, Velický Matěj, Frank Otakar, Kavan Ladislav
J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague, Czech Republic.
Nanomaterials (Basel). 2021 May 11;11(5):1256. doi: 10.3390/nano11051256.
Systematic in situ Raman microdroplet spectroelectrochemical (Raman-μSEC) characterization of copper (I) thiocyanate (CuSCN) prepared using electrodeposition from aqueous solution on various substrates (carbon-based, F-doped SnO) is presented. CuSCN is a promising solid p-type inorganic semiconductor used in perovskite solar cells as a hole-transporting material. SEM characterization reveals that the CuSCN layers are homogenous with a thickness of ca. 550 nm. Raman spectra of dry CuSCN layers show that the SCN ion is predominantly bonded in the thiocyanate resonant form to copper through its S-end (Cu-S-C≡N). The double-layer capacitance of the CuSCN layers ranges from 0.3 mF/cm on the boron-doped diamond to 0.8 mF/cm on a glass-like carbon. In situ Raman-μSEC shows that, independently of the substrate type, all Raman vibrations from CuSCN and the substrate completely vanish in the potential range from 0 to -0.3 V vs. Ag/AgCl, caused by the formation of a passivation layer. At positive potentials (+0.5 V vs. Ag/AgCl), the bands corresponding to the CuSCN vibrations change their intensities compared to those in the as-prepared, dry layers. The changes concern mainly the Cu-SCN form, showing the dependence of the related vibrations on the substrate type and thus on the local environment modifying the delocalization on the Cu-S bond.
本文介绍了通过水溶液电沉积法在各种基底(碳基、氟掺杂氧化锡)上制备的硫氰酸亚铜(CuSCN)的系统原位拉曼微滴光谱电化学(Raman-μSEC)表征。CuSCN是一种很有前景的固体p型无机半导体,在钙钛矿太阳能电池中用作空穴传输材料。扫描电子显微镜(SEM)表征显示,CuSCN层均匀,厚度约为550nm。干燥CuSCN层的拉曼光谱表明,SCN离子主要通过其S端以硫氰酸盐共振形式与铜键合(Cu-S-C≡N)。CuSCN层的双层电容范围从硼掺杂金刚石上的0.3mF/cm到类玻璃碳上的0.8mF/cm。原位拉曼-μSEC表明,与基底类型无关,在相对于Ag/AgCl为0至-0.3V的电位范围内,CuSCN和基底的所有拉曼振动都完全消失,这是由于形成了钝化层。在正电位(相对于Ag/AgCl为+0.5V)下,与制备好的干燥层相比,对应于CuSCN振动的谱带强度发生了变化。这些变化主要涉及Cu-SCN形式,表明相关振动对基底类型的依赖性,从而对改变Cu-S键离域的局部环境的依赖性。