Persky Eylon, Vardi Naor, Monteiro Ana Mafalda R V L, van Thiel Thierry C, Yoon Hyeok, Xie Yanwu, Fauqué Benoît, Caviglia Andrea D, Hwang Harold Y, Behnia Kamran, Ruhman Jonathan, Kalisky Beena
Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.
Nat Commun. 2021 Jun 3;12(1):3311. doi: 10.1038/s41467-021-23393-5.
In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO/SrTiO interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming.
在接近相变的系统中,宏观性质通常遵循代数标度律,该定律由系统的维度和潜在对称性决定。这种普适标度的出现意味着微观细节无关紧要。在这里,我们局部研究了LaAlO₃/SrTiO₃界面处金属-绝缘体转变的标度性质。我们表明,通过改变电子系统的维度和对称性,结构和电子性质之间的耦合会阻止转变附近的普适行为。通过对系统中的电流流动进行成像,我们发现结构畴界会改变接近转变点处的丝状流动,从而阻止形成具有预期普适维度的分形。