Zhu Tiancong, Bishop Alexander J, Zhou Tong, Zhu Menglin, O'Hara Dante J, Baker Alexander A, Cheng Shuyu, Walko Robert C, Repicky Jacob J, Liu Tao, Gupta Jay A, Jozwiak Chris M, Rotenberg Eli, Hwang Jinwoo, Žutić Igor, Kawakami Roland K
Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
Department of Physics, University at Buffalo, Buffalo, New York 14260, United States.
Nano Lett. 2021 Jun 23;21(12):5083-5090. doi: 10.1021/acs.nanolett.1c00141. Epub 2021 Jun 7.
The intrinsic magnetic topological insulators MnBiTe and MnBiSe support novel topological states related to symmetry breaking by magnetic order. Unlike MnBiTe, the study of MnBiSe has been inhibited by the lack of bulk crystals, as the van der Waals (vdW) crystal is not the thermodynamic equilibrium phase. Here, we report the layer-by-layer synthesis of vdW MnBiSe crystals using nonequilibrium molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy and scanning tunneling microscopy identify a well-ordered vdW crystal with septuple-layer base units. The magnetic properties agree with the predicted layered antiferromagnetic ordering but disagree with its predicted out-of-plane orientation. Instead, our samples exhibit an easy-plane anisotropy, which is explained by including dipole-dipole interactions. Angle-resolved photoemission spectroscopy reveals the gapless Dirac-like surface state, which demonstrates that MnBiSe is a topological insulator above the magnetic-ordering temperature. These studies show that MnBiSe is a promising candidate for exploring rich topological phases of layered antiferromagnetic topological insulators.
本征磁性拓扑绝缘体MnBiTe和MnBiSe支持与磁序破缺相关的新型拓扑态。与MnBiTe不同,由于范德华(vdW)晶体不是热力学平衡相,缺乏块状晶体阻碍了对MnBiSe的研究。在此,我们报道了使用非平衡分子束外延逐层合成vdW MnBiSe晶体。原子分辨率扫描透射电子显微镜和扫描隧道显微镜确定了具有七层基底单元的有序vdW晶体。磁性特性与预测的层状反铁磁序相符,但与其预测的面外取向不符。相反,我们的样品表现出易平面各向异性,这可以通过包含偶极-偶极相互作用来解释。角分辨光电子能谱揭示了无隙类狄拉克表面态,这表明MnBiSe在磁有序温度以上是一种拓扑绝缘体。这些研究表明,MnBiSe是探索层状反铁磁拓扑绝缘体丰富拓扑相的有前途的候选材料。