School of Science, Henan Institute of Technology, Xinxiang, 453003, P.R. China.
Henan Key Laboratory of Materials on Deep-Earth Engineering School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, P.R. China.
Chemphyschem. 2021 Aug 18;22(16):1712-1721. doi: 10.1002/cphc.202100257. Epub 2021 Jul 9.
The synthesis of ammonia (NH ) through the electrochemical reduction of molecular nitrogen (N ) is a promising strategy for significantly reducing energy consumption compared to traditional industrial processes. Herein, we report the design of a series of monovacancy and divacancy defective graphenes decorated with single 3d transition metal atoms (TM@MVG and TM@DVG; TM=Sc-Zn) as electrocatalysts for the nitrogen-reduction reaction (NRR) aided by density functional theory (DFT) calculations. By comparing energies for N adsorption as well as the free energies associated with *N activation and *N H formation, we successfully identified V@MVG, with the lowest potential of -0.63 V, to be an effective catalytic substrate for the NRR in an enzymatic mechanism. Electronic properties, including Bader charges, charge density differences, partial densities of states, and crystal orbital Hamilton populations, are further analyzed in detail. We believe that these results help to explain recent observations in this field and provide guidance for the exploration of efficient electrocatalysts for the NRR.
通过电化学还原分子氮(N )合成氨(NH )是一种很有前途的策略,与传统的工业工艺相比,它可以显著降低能源消耗。在此,我们通过密度泛函理论(DFT)计算报告了一系列单空位和双空位缺陷石墨烯上的单 3d 过渡金属原子(TM@MVG 和 TM@DVG;TM=Sc-Zn)的设计,作为氮还原反应(NRR)的电催化剂。通过比较 N 吸附的能量以及与 *N 活化和 *N H 形成相关的自由能,我们成功地确定了 V@MVG,其最低电位为-0.63 V,是一种有效的酶机制 NRR 催化底物。进一步详细分析了电子性质,包括 Bader 电荷、电荷密度差、部分态密度和晶体轨道哈密顿人口。我们相信这些结果有助于解释该领域的最新观察结果,并为探索 NRR 的高效电催化剂提供指导。