具有Ag/C/MAPbI/CZTSe/Mo/FTO多层结构的薄膜太阳能电池的制备与表征

Preparation and Characterization of Thin-Film Solar Cells with Ag/C/MAPbI/CZTSe/Mo/FTO Multilayered Structures.

作者信息

Chang Tsung-Wen, Tseng Chzu-Chiang, Chen Dave W, Wu Gwomei, Yang Chia-Ling, Chen Lung-Chien

机构信息

Department of Electronic Engineering, Institute of Electro-Optical Engineering, Chang Gung University, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan.

Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.

出版信息

Molecules. 2021 Jun 9;26(12):3516. doi: 10.3390/molecules26123516.

DOI:10.3390/molecules26123516

PMID:34207705

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8228985/

Abstract

New solar cells with Ag/C/MAPbI/CuZnSnSe (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron-transport layer, active photovoltaic layer, and hole-transport layer were made of C, CHNHPbI (MAPbI) perovskite, and CZTSe, respectively. The CZTSe hole-transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI films were prepared using a two-step spin-coating method on the CZTSe hole-transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI perovskite films could be substantially improved. Finally, n-type C was vacuum-evaporated to be the electronic transport layer. The 50 nm C thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density-voltage characteristics were evaluated and compared with the thin-film microstructures. The photo-electronic power-conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin-film solar cell characteristics of open-circuit voltage, short-circuit current density, fill factor, series-resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm, 67.39%, 18.5 Ω and 1.42 mW, respectively.

摘要

本研究制备并研究了在玻璃基板上具有Ag/C/MAPbI/CuZnSnSe（CZTSe）/Mo/FTO多层结构的新型太阳能电池。电子传输层、有源光伏层和空穴传输层分别由C、CHNHPbI（MAPbI）钙钛矿和CZTSe制成。CZTSe空穴传输层通过磁控溅射沉积，热退火温度分别为300℃、400℃和500℃，膜厚也在50~300nm之间变化。有源光伏MAPbI薄膜在CZTSe空穴传输层上采用两步旋涂法制备。结果表明，MAPbI钙钛矿薄膜的晶体结构和畴尺寸可以得到显著改善。最后，通过真空蒸发沉积n型C作为电子传输层。50nm的C薄膜与100nm的Ag电极层相结合，在多层结构中提供了足够的电子电流传输。对太阳能电池的电流密度-电压特性进行了评估，并与薄膜微观结构进行了比较。当退火温度为500℃且膜厚为200nm时，光电功率转换效率可提高到14.2%。发现薄膜太阳能电池的开路电压、短路电流密度、填充因子、串联电阻和Pmax等特性分别为1.07V、19.69mA/cm、67.39%、18.5Ω和1.42mW。