Isomura Noritake, Kimoto Yasuji
Toyota Central R&D Laboratories Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.
J Synchrotron Radiat. 2021 Jul 1;28(Pt 4):1114-1118. doi: 10.1107/S1600577521004008. Epub 2021 May 27.
The identification of the incorporated site of magnesium (Mg) and hydrogen (H) required for p-type formation in gallium nitride (GaN) power devices has been demonstrated by X-ray absorption spectroscopy (XAS). In this study, the fluorescence line of Mg with 3 × 10 atoms cm was successfully separated from that of Ga using a superconducting tunnel junction array detector with high sensitivity and high energy resolution, and consequently the Mg K-edge XAS spectra of such dilute samples were obtained. The site of Mg atoms incorporated into the GaN lattice was identified as the Ga substitutional site by comparing the experimental XAS spectrum with the simulated spectra calculated by density functional theory. In addition, the presence or absence of H around Mg can be determined through distinctive characteristics expected from the spectrum simulations.
通过X射线吸收光谱（XAS）已证明了氮化镓（GaN）功率器件中形成p型所需的镁（Mg）和氢（H）掺入位点的识别。在本研究中，使用具有高灵敏度和高能量分辨率的超导隧道结阵列探测器成功地将具有3×10个原子/cm的Mg荧光线与Ga的荧光线分离，从而获得了此类稀样品的Mg K边XAS光谱。通过将实验XAS光谱与密度泛函理论计算的模拟光谱进行比较，确定了掺入GaN晶格中的Mg原子位点为Ga替代位点。此外，可以通过光谱模拟预期的独特特征来确定Mg周围是否存在H。
