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中空金属有机框架的制备:外延保护与选择性蚀刻

Preparation of hollow metal-organic frameworks epitaxial protection and selective etching.

作者信息

Chen Peican, Chen Jiawei, Hu Xuefu, Wang Cheng

机构信息

School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, P. R. China.

State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China.

出版信息

Faraday Discuss. 2021 Oct 15;231(0):181-193. doi: 10.1039/d1fd00016k.

Abstract

Hollow metal-organic frameworks (MOFs) with only a shell may be used for efficient catalysis. In this work, a general sequential synthesis was employed to successfully create Hf-based hollow MOFs, such as UiO-66, MOF-808, and PCN-223. Etchants including monocarboxylic acids and HO are required to remove the interior of the MOFs to form hollow structures, while the different stability of the interior and surface of the MOFs partly resulting from surface epitaxy protection was responsible for the selective etching. With these insights, scale-up of hollow octahedral UiO-66 was realized. This work paves a way to rationally design hollow MOFs.

摘要

仅具有外壳的中空金属有机框架(MOF)可用于高效催化。在这项工作中,采用了一种通用的顺序合成方法成功制备了基于铪的中空MOF,如UiO-66、MOF-808和PCN-223。需要包括一元羧酸和HO在内的蚀刻剂来去除MOF的内部以形成中空结构,而MOF内部和表面不同的稳定性(部分归因于表面外延保护)导致了选择性蚀刻。基于这些认识,实现了中空八面体UiO-66的放大制备。这项工作为合理设计中空MOF铺平了道路。

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