用于先进CMOS后端工艺的宽范围等离子体诱导充电效应探测器。
Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes.
作者信息
Chao Yi-Jie, Yang Kai-Wei, Su Chi, Lin Chrong-Jung, King Ya-Chin
机构信息
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
出版信息
Nanoscale Res Lett. 2021 Jul 3;16(1):112. doi: 10.1186/s11671-021-03570-7.
Abstract
This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapting the novel PID detectors, the maximum charging levels of the detectors have been enhanced.
摘要
这项工作提出了一种改进的等离子体诱导充电（PID）探测器，以扩大检测范围，用于监测先进CMOS后端工艺中晶圆上可能的等离子体损伤。研究了带有扩展电容器的用于等离子体诱导损伤模式的新型天线设计。通过采用新型PID探测器，探测器的最大充电水平得到了提高。
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