用于FinFET CMOS技术中EUV曝光控制的嵌入式微探测器

Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology.

作者信息

Wang Chien-Ping, Lin Burn Jeng, Wu Pin-Jiun, Shih Jiaw-Ren, Chih Yue-Der, Chang Jonathan, Lin Chrong Jung, King Ya-Chin

机构信息

Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.

Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan.

出版信息

Nanoscale Res Lett. 2022 Jan 5;17(1):5. doi: 10.1186/s11671-021-03645-5.

DOI:10.1186/s11671-021-03645-5

PMID:34985604

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8733134/

Abstract

An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.

摘要

展示了一种用于原位极紫外（EUV，波长为13.5纳米）检测的片上微探测器，其具有与鳍式场效应晶体管互补金属氧化物半导体（FinFET CMOS）的兼容性、1T像素和无电池传感功能。此外，检测结果可以在像素内存储节点中保存数天，实现离线和无损读取。这种高空间分辨率的微探测器可用于提取晶圆上入射EUV的实际参数，包括光强度、曝光时间和能量，这些参数是优化5纳米及更先进鳍式场效应晶体管技术光刻工艺的关键。