Karatum Onuralp, Aria Mohammad Mohammadi, Eren Guncem Ozgun, Yildiz Erdost, Melikov Rustamzhon, Srivastava Shashi Bhushan, Surme Saliha, Dogru Itir Bakis, Bahmani Jalali Houman, Ulgut Burak, Sahin Afsun, Kavakli Ibrahim Halil, Nizamoglu Sedat
Department of Electrical and Electronics Engineering, Koc University, Istanbul, Turkey.
Department of Biomedical Science and Engineering, Koc University, Istanbul, Turkey.
Front Neurosci. 2021 Jun 23;15:652608. doi: 10.3389/fnins.2021.652608. eCollection 2021.
Light-activated biointerfaces provide a non-genetic route for effective control of neural activity. InP quantum dots (QDs) have a high potential for such biomedical applications due to their uniquely tunable electronic properties, photostability, toxic-heavy-metal-free content, heterostructuring, and solution-processing ability. However, the effect of QD nanostructure and biointerface architecture on the photoelectrical cellular interfacing remained unexplored. Here, we unravel the control of the photoelectrical response of InP QD-based biointerfaces nanoengineering from QD to device-level. At QD level, thin ZnS shell growth (∼0.65 nm) enhances the current level of biointerfaces over an order of magnitude with respect to only InP core QDs. At device-level, band alignment engineering allows for the bidirectional photoelectrochemical current generation, which enables light-induced temporally precise and rapidly reversible action potential generation and hyperpolarization on primary hippocampal neurons. Our findings show that nanoengineering QD-based biointerfaces hold great promise for next-generation neurostimulation devices.
光激活生物界面为有效控制神经活动提供了一条非基因途径。磷化铟量子点(QDs)因其独特的可调电子特性、光稳定性、无重金属毒性成分、异质结构以及溶液处理能力,在这类生物医学应用中具有很高的潜力。然而,量子点纳米结构和生物界面结构对光电细胞接口的影响仍未得到探索。在此,我们从量子点到器件层面揭示了基于磷化铟量子点的生物界面纳米工程对光电响应的控制。在量子点层面,相对于仅含磷化铟核心量子点的情况,约0.65纳米厚的硫化锌壳层生长使生物界面的电流水平提高了一个数量级以上。在器件层面,能带排列工程允许双向光生电化学电流的产生,这使得在原代海马神经元上能够实现光诱导的时间精确且快速可逆的动作电位产生和超极化。我们的研究结果表明,基于量子点的生物界面纳米工程在下一代神经刺激装置方面具有巨大潜力。