Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States.
Photonics Center, Boston University, Boston, Massachusetts 02215, United States.
Nano Lett. 2021 Apr 14;21(7):3271-3279. doi: 10.1021/acs.nanolett.1c00600. Epub 2021 Mar 23.
This report of the reddest emitting indium phosphide quantum dots (InP QDs) to date demonstrates tunable, near-infrared (NIR) photoluminescence (PL) as well as PL multiplexing in the first optical tissue window while avoiding toxic constituents. This synthesis overcomes the InP "growth bottleneck" and extends the emission peak of InP QDs deeper into the first optical tissue window using an inverted QD heterostructure, specifically ZnSe/InP/ZnS core/shell/shell nanoparticles. The QDs exhibit InP shell thickness-dependent tunable emission with peaks ranging from 515-845 nm. The high absorptivity of InP yields effective photoexcitation of the QDs with UV, visible, and NIR wavelengths. These nanoparticles extend the range of tunable direct-bandgap emission from InP-based nanostructures, effectively overcoming a synthetic barrier that has prevented InP-based QDs from reaching their full potential as NIR imaging agents. Multiplexed lymph node imaging in a mouse model demonstrates the potential of the NIR-emitting InP particles for imaging.
这份报告介绍了迄今为止红色发射铟磷量子点(InP QDs),这些量子点具有可调近红外(NIR)光致发光(PL)性能,且在第一光学组织窗口中可实现 PL 多重成像,同时避免使用有毒成分。该合成方法克服了 InP 的“生长瓶颈”,并使用倒置 QD 异质结构(具体为 ZnSe/InP/ZnS 核/壳/壳纳米粒子)将 InP QD 的发射峰进一步扩展到第一光学组织窗口。这些 QD 表现出随 InP 壳层厚度可调谐的发射,峰值范围从 515nm 到 845nm。InP 的高吸收率可有效激发 QD 的紫外、可见和近红外波长的光。这些纳米粒子扩展了基于 InP 的纳米结构的可调谐直接带隙发射范围,有效地克服了阻碍基于 InP 的 QD 充分发挥其作为近红外成像剂潜力的合成障碍。在小鼠模型中进行的淋巴结多重成像表明,这些近红外发射 InP 粒子在成像方面具有潜力。